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北京大学 [17]
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期刊论文 [19]
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Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:
Zheng, QW (Zheng, Qiwen)[ 1 ]
;
Cui, JW (Cui, Jiangwei)[ 1 ]
;
Xu, LW (Xu, Liewei)[ 2 ]
;
Ning, BX (Ning, Bingxu)[ 3 ]
;
Zhao, K (Zhao, Kai)[ 3 ]
收藏
  |  
浏览/下载:98/0
  |  
提交时间:2019/05/14
Back-gate biasing
forward body bias (FBB)
total ionizing dose (TID)
ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)
An Effective Method to Compensate Total Ionizing Dose-Induced Degradation on Double-SOI Structure
会议论文
作者:
Huang, Yang
;
Li, Binhong
;
Zhao, Xing
;
Zheng, Zhongshan
;
Gao, Jiantou
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/11/26
Coupling effect
double SOI (DSOI)
negative back-gate bias
total ionizing dose (TID)
Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Zhou, Xiaoliang
;
Shao, Yang
;
Zhang, Letao
;
Xiao, Xiang
;
Han, Dedong
;
Wang, Yi
;
Zhang, Shengdong
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2017/12/03
Amorphous oxide semiconductor
thinfilm transistors
oxygen adsorption
surface-state model
OXIDE
ZNO
WATER
Indium-Tin-Oxide Thin-Film Transistors With In Situ Anodized Ta2O5 Passivation Layer
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2016
Le, Yong
;
Shao, Yang
;
Xiao, Xiang
;
Xu, Xin
;
Zhang, Shengdong
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
Indium tin oxide (ITO)
thin-film transistors (TFTs)
anodization
back channel passivation
STABILITY
CHANNEL
Investigation into sand mura effects of a-IGZO TFT LCDs
期刊论文
MICROELECTRONICS RELIABILITY, 2016
Liu, Xiang
;
Hu, Hehe
;
Ning, Ce
;
Shang, Guangliang
;
Yang, Wei
;
Wang, Ke
;
Lu, Xinhong
;
Lee, Woobong
;
Wang, Gang
;
Xue, Jianshe
;
Jun, Jung Mok
;
Zhang, Shengdong
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2017/12/03
a-IGZO TFTs
LCD reliability test
Sand mura
Threshold voltage shift
Positive
Thermal gate bias stress
THIN-FILM TRANSISTORS
AN EXPERIMENTAL AND ANALYTICAL METHOD TO OBSERVE THE POLYSILICON NANOWIRE MOSFET THRESHOLD VOLTAGE
其他
2016-01-01
Sheu, Gene
;
Yang, Shao-Ming
;
Aanand
;
Imam, Syed Sarwar
;
Jen, Fan Ming
;
Lu, Shao Wei
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/03
nanowire
undoped-polysilicon
native gate oxide
drain saturation current
back-gate
mean-free path
TRANSISTORS
TRANSPORT
Low Power High Performance FinFET Standard Cells Based on Mixed Back Biasing Technology
期刊论文
IEICE TRANSACTIONS ON ELECTRONICS, 2016
Wang, Tian
;
Cui, Xiaoxin
;
Liao, Kai
;
Liao, Nan
;
Cui, Xiaole
;
Yu, Dunshan
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/04
VLSI
FinFET
standard cell
stacking
back biasing
REDUCTION
Back Channel Anodization Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Process
期刊论文
ieee electron device letters, 2015
Xiao, Xiang
;
Shao, Yang
;
He, Xin
;
Deng, Wei
;
Zhang, Letao
;
Zhang, Shengdong
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/11/11
Amorphous indium gallium zinc oxide (a-IGZO)
thin-film transistors (TFTs)
back channel anodization (BCA)
low temperature
Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium-Gallium-Zinc Thin-Film-Transistors by CF4+O-2 Plasma Treatment
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2015
Liu, Xiang
;
Wang, Lisa Ling
;
Hu, Hehe
;
Lu, Xinhong
;
Wang, Ke
;
Wang, Gang
;
Zhang, Shengdong
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2017/12/03
a-IGZO TFTs
back-channel-etch (BCE)
plasma treatment
threshold voltage shift
THRESHOLD VOLTAGE
SHIFT
OXIDE
GATE
Employing the mixed FBB/RBB in the design of FinFET logic gates
其他
2015-01-01
Wang, Tian
;
Cui, Xiaoxin
;
Liao, Kai
;
Liao, Nan
;
Ni, Yewen
;
Yu, Dunshan
;
Cui, Xiaole
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
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