QQ客服 官方微博 反馈留言

浏览/检索结果: 共8条，第1-8条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE) 期刊论文 光子学报, 2008, 卷号: 37, 期号: 6, 页码: 1107-1111 NIU Zhihong; REN Zhengwei; HE Zhenhong 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/23 Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires 会议论文 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Miao, ZH (Miao, Zhenhua); Gong, Z (Gong, Zheng); Fang, ZD (Fang, Zhidan); Niu, ZC (Niu, Zhichuan) 收藏  |  浏览/下载：82/21  |  提交时间：2010/03/29 atomic hydrogen  molecular beam epitaxy  step arrays  MOLECULAR-BEAM EPITAXY  ATOMIC-HYDROGEN  VICINAL SURFACE  QUANTUM DOTS  GROWTH  TEMPERATURE  IRRADIATION  MECHANISM  MBE   Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on gaas (311)a substrate by molecular beam epitaxy 期刊论文 Chinese physics, 2003, 卷号: 12, 期号: 2, 页码: 218-221 作者:  Zhou, DY;  Lan, Q;  Kong, YC;  Miao, ZH;  Feng, SL 收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12 Molecular beam epitaxy (mbe) step bunching  Ingaas  Quantum wire   Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy 期刊论文 chinese physics, 2003, 卷号: 12, 期号: 2, 页码: 218-221 Zhou DY; Lan Q; Kong YC; Miao ZH; Feng SL; Niu ZC 收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12 molecular beam epitaxy (MBE) step bunching  InGaAs  quantum wire  SURFACE-DIFFUSION  GROWTH  DOTS   Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD 期刊论文 thin solid films, 2001, 卷号: 395, 期号: 1-2, 页码: 213-216 Feng Y; Zhu M; Liu F; Liu J; Han H; Han Y 收藏  |  浏览/下载：161/11  |  提交时间：2010/08/12 poly-Si  structure  hot-wire  plasma-enhanced chemical vapor deposition (PECVD)  CHEMICAL-VAPOR-DEPOSITION  MICROCRYSTALLINE SILICON  HYDROGEN   Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD 会议论文 1st international conference on cat-cvd (hot wire cvd) process, kanazawa, japan, nov 14-17, 2000 Feng Y; Zhu M; Liu F; Liu J; Han H; Han Y 收藏  |  浏览/下载：20/0  |  提交时间：2010/11/15 poly-Si  structure  hot-wire  plasma-enhanced chemical vapor deposition (PECVD)  CHEMICAL-VAPOR-DEPOSITION  MICROCRYSTALLINE SILICON  HYDROGEN   The improvement characteristics of homoepitaxial gaas grown by atomic hydrogen-assisted molecular beam epitaxy 期刊论文 Journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 191-193 作者:  Wang, HL;  Zhu, HJ;  Ning, D;  Wang, H;  Wang, XD 收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12 Atomic hydrogen-assisted molecular beam epitaxy  Deep level transient spectroscopy  Deep level defects   The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy 期刊论文 journal of infrared and millimeter waves, 2000, 卷号: 19, 期号: 3, 页码: 191-193 Wang HL; Zhu HJ; Ning D; Wang H; Wang XD; Guo ZS; Feng SL 收藏  |  浏览/下载：83/0  |  提交时间：2010/08/12 atomic hydrogen-assisted molecular beam epitaxy  deep level transient spectroscopy  deep level defects  DISLOCATION DENSITY  IRRADIATION