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	Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on gaas (311)a substrate by molecular beam epitaxy
	Zhou, DY; Lan, Q; Kong, YC; Miao, ZH; Feng, SL; Niu, ZC
刊名	Chinese physics
	2003-02-01
卷号	12期号:2页码:218-221
关键词	Molecular beam epitaxy (mbe) step bunching Ingaas Quantum wire
ISSN号	1009-1963
通讯作者	Zhou, dy()
英文摘要	Atomic hydrogen assisted molecular beam epitaxy (mbe) is a novel type of epitaxial growth of nanostructures. the gaas (311)a surface naturally forms one-dimensional step arrays by step bunching along the direction of (-233) and the space period is around 40nm. the step arrays extend over several mum without displacement. the ingaas quantum wire arrays are grown on the step arrays as the basis. our results may prompt further development of more uniform quantum wire and quantum dot arrays.
WOS关键词	SURFACE-DIFFUSION ; GROWTH ; DOTS
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	CHINESE PHYSICAL SOC
WOS记录号	WOS:000181024600018
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2429374
专题	半导体研究所
通讯作者	Zhou, DY
作者单位	Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Zhou, DY,Lan, Q,Kong, YC,et al. Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on gaas (311)a substrate by molecular beam epitaxy[J]. Chinese physics,2003,12(2):218-221.
APA	Zhou, DY,Lan, Q,Kong, YC,Miao, ZH,Feng, SL,&Niu, ZC.(2003).Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on gaas (311)a substrate by molecular beam epitaxy.Chinese physics,12(2),218-221.
MLA	Zhou, DY,et al."Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on gaas (311)a substrate by molecular beam epitaxy".Chinese physics 12.2(2003):218-221.

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