CORC

浏览/检索结果: 共125条,第1-10条 帮助

已选(0)清除 条数/页:   排序方式:
Origination and evolution of point defects in AlN film annealed at high temperature 期刊论文
Journal of Luminescence, 2021, 卷号: 235
作者:  C. Kai;  H. Zang;  J. Ben;  K. Jiang;  Z. Shi
收藏  |  浏览/下载:5/0  |  提交时间:2022/06/13
The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 4
作者:  J. W. Ben,Z. M. Shi,H. Zang,X. J. Sun,X. K. Liu,W. Lu and D. B. Li
收藏  |  浏览/下载:2/0  |  提交时间:2021/07/06
Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification 期刊论文
Applied Surface Science, 2020, 卷号: 518, 页码: 7
作者:  B. Tang,H. P. Hu,H. Wan,J. Zhao,L. Y. Gong,Y. Lei,Q. Zhao and S. J. Zhou
收藏  |  浏览/下载:2/0  |  提交时间:2021/07/06
Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field 期刊论文
Nanoscale Research Letters, 2019, 卷号: 14, 期号: 1
作者:  Li,Dabing;  Feng,Zhe Chuan;  Luo,Xuguang;  Wang,Yong;  Kai,Cuihong
收藏  |  浏览/下载:117/0  |  提交时间:2019/08/21
The substantial dislocation reduction by preferentially passivating etched defect pits in gan epitaxial growth 期刊论文
Applied physics express, 2019, 卷号: 12, 期号: 3
作者:  Hu,Wei;  Die,Junhui;  Wang,Caiwei;  Yan,Shen;  Hu,Xiaotao
收藏  |  浏览/下载:145/0  |  提交时间:2019/05/09
Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 775, 页码: 1213-1220
作者:  Y.P.Chen;  C.H.Zheng;  L.Q.Hu;  Y.R.Chen
收藏  |  浏览/下载:1/0  |  提交时间:2020/08/24
Fast Growth of Strain-Free AIN on Graphene-Buffered Sapphire 期刊论文
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2018, 卷号: 140, 期号: 38, 页码: 11935-11941
作者:  Qi Y;  Wang YY;  Pang ZQ(庞振乾);  Dou ZP;  Wei TB
收藏  |  浏览/下载:79/0  |  提交时间:2018/10/30
Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells 期刊论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2018, 卷号: 185, 期号: 10, 页码: 36-44
作者:  Aierken, A (Aierken, A.)[ 1 ];  Fang, L (Fang, L.)[ 2 ];  Heini, M (Heini, M.)[ 1 ];  Zhang, QM (Zhang, Q. M.)[ 2 ];  Li, ZH (Li, Z. H.)[ 1,3 ]
收藏  |  浏览/下载:38/0  |  提交时间:2018/08/07
Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers 期刊论文
Journal of Crystal Growth, 2018, 卷号: 488, 页码: 8–15
作者:  Haining Chong ;   Zhewei Wang ;   Chaonan Chen ;   Zemin Xu ;   Ke Wu ;   Lan Wu ;   Bo Xu ;   Hui Ye
收藏  |  浏览/下载:39/0  |  提交时间:2019/11/15
Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si 期刊论文
ACS Photonics, 2018, 卷号: 5, 期号: 3, 页码: 699-704
作者:  Feng, Meixin;  Li, Zengcheng;  Wang, Jin;  Zhou, Rui;  Sun, Qian
收藏  |  浏览/下载:2/0  |  提交时间:2019/09/17


©版权所有 ©2017 CSpace - Powered by CSpace