Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si

doi:10.1021/acsphotonics.7b01215

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	Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si
	Feng, Meixin; Li, Zengcheng; Wang, Jin; Zhou, Rui; Sun, Qian; Sun, Xiaojuan; Li, Dabing; Gao, Hongwei; Zhou, Yu; Zhang, Shuming
刊名	ACS Photonics
	2018
卷号	5 期号:3 页码:699-704
关键词	Ultraviolet lasers Aluminum alloys Aluminum gallium nitride Aluminum nitride Defects Gallium alloys III-V semiconductors Lasers Lattice mismatch Quantum well lasers Semiconductor alloys Semiconductor quantum wells Stresses Thermal expansion
ISSN号	23304022
DOI	10.1021/acsphotonics.7b01215
英文摘要	This letter reports a successful fabrication of roomerature electrically injected AlGaN-based near-ultraviolet laser diode grown on Si. An Al-composition step down-graded AlN/AlGaN multilayer buffer was carefully engineered to not only tackle the huge difference in the coefficient of thermal expansion between AlGaN template and Si substrate, but also reduce the threading dislocation density caused by the large lattice mismatch. On top of the crack-free n-AlGaN template, high quality InGaN/AlGaN quantum wells were grown, sandwiched by waveguide and optical cladding layers, for the fabrication of edge-emitting laser diode. A dramatic narrowing of the electroluminescence spectral line-width, an elongated far-field pattern, and a clear discontinuity in the slope of light output power plotted as a function of the injection current provide an unambiguous evidence of lasing. 2018 American Chemical Society.
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/60795]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Feng, Meixin,Li, Zengcheng,Wang, Jin,et al. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si[J]. ACS Photonics,2018,5(3):699-704.
APA	Feng, Meixin.,Li, Zengcheng.,Wang, Jin.,Zhou, Rui.,Sun, Qian.,...&Yang, Hui.(2018).Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si.ACS Photonics,5(3),699-704.
MLA	Feng, Meixin,et al."Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si".ACS Photonics 5.3(2018):699-704.