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Low Power Static Induction Transistor with High Gate-Control Efficiency 会议论文
10th IEEE Conference on Industrial Electronics and Applications, Auckland, NEW ZEALAND, JUN 15-17, 2015
作者:  Qiao, JL;  Wang, J;  Yan, ZW;  Yang, JH;  Wang, ZX
收藏  |  浏览/下载：6/0  |  提交时间：2017/01/20
Design of Short Channel Static Induction Transistor for Low Power Applications 会议论文
10th IEEE Conference on Industrial Electronics and Applications, Auckland, NEW ZEALAND, JUN 15-17, 2015
作者:  Wang, J;  Qiao, JL;  Yan, ZW;  Yang, JH;  Wang, ZX
收藏  |  浏览/下载：6/0  |  提交时间：2017/01/20
Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 2, 页码: 23705
Liu GP; Wu J; Lu YW; Li ZW; Song YF; Li CM; Yang SY; Liu XL; Zhu QS; Wang ZG
收藏  |  浏览/下载：23/0  |  提交时间：2012/02/06
Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.74512
Lv YJ; Lin ZJ; Corrigan TD; Zhao JZ; Cao ZF; Meng LG; Luan CB; Wang ZG; Chen H
收藏  |  浏览/下载：64/6  |  提交时间：2011/07/05
Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.54503
作者:  Jiang XW
收藏  |  浏览/下载：50/2  |  提交时间：2011/07/05
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG
收藏  |  浏览/下载：57/2  |  提交时间：2011/07/05
The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure 期刊论文
european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102
Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ
收藏  |  浏览/下载：36/0  |  提交时间：2012/01/06
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文
applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:  Bi Y;  Lin DF;  Peng EC
收藏  |  浏览/下载：19/0  |  提交时间：2011/09/14
Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor 期刊论文
半导体学报/Journal of Semiconductors, 2010, 卷号: 31, 期号: 4, 页码: 20-24
作者:  Zhang Y(张雍);  Yang JH(杨建红);  Cai XY(蔡雪原);  Wang ZX(汪再兴)
收藏  |  浏览/下载：1/0  |  提交时间：2016/10/21
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC; Wang XL; Xiao HL; Ran JX; Wang CM; Ma ZY; Luo WJ; Wang ZG
收藏  |  浏览/下载：193/43  |  提交时间：2010/03/08

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