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Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs
会议论文
作者:
Cui, Miao
;
Cai, Yutao
;
Lam, Sang
;
Liu, Wen
;
Zhao, Chun
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/11/26
AlGaN/GaN MIS-HEMTs
Frequency dependence
Frequency independent
High-voltage switching
Metal-insulator-semiconductors
MIS-HEMT
Threshold voltage shifts
Voltage hysteresis
Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device
期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822
作者:
Chen, Y. R.
;
Li, Z. M.
;
Zhang, Z. W.
;
Hu, L. Q.
;
Jiang, H.
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  |  
浏览/下载:6/0
  |  
提交时间:2019/09/17
Data storage materials
Resistive switching
Metal-insulator-semiconductor
Annealing effect
Nonvolatile memory
nonvolatile memory
behaviors
mechanism
breakdown
layer
power
ti
Chemistry
Materials Science
Metallurgy & Metallurgical Engineering
Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 3515-3518
作者:
Sun, Ruize
;
Liang, Yung C.
;
Yeo, Yee-Chia
;
Zhao, Cezhou
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/11/26
high-temperature operation
AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT)
power converter control
embedded current sensor
A single-phase Ba9Lu2Si6O24:Eu2+, Ce3+, Mn2+ phosphor with tunable full-color emission for NUV-based white LED applications
期刊论文
Materials Research Bulletin, 2016, 卷号: 80
作者:
Zhang, C. H.
;
Y. F. Liu
;
J. H. Zhang
;
X. Zhang
;
J. X. Zhang
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  |  
浏览/下载:13/0
  |  
提交时间:2017/09/11
High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2016, 卷号: 37, 期号: 12
作者:
Huang, Sen
;
Liu, Xinyu
;
Wang, Xinhua
;
Kang, Xuanwu
;
Zhang, Jinhan
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  |  
浏览/下载:74/0
  |  
提交时间:2017/03/11
Realistic Trap Configuration Scheme With Fabrication Processes in Consideration for the Simulations of AlGaN/GaN MIS-HEMT Devices
会议论文
作者:
Sun, Ruize
;
Liang, Yung C.
;
Yeo, Yee-Chia
;
Wang, Yun-Hsiang
;
Zhao, Cezhou
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/02
GaN HEMT simulations
AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistor (MIS-HEMT)
interfacial traps
Room-temperature electrically pumped near-infrared random lasing from high-quality m-plane ZnO-based metal-insulator-semiconductor devices
期刊论文
NANOSCALE RESEARCH LETTERS, 2015, 卷号: 10
作者:
Chen, Chao
;
Wang, Ti
;
Wu, Hao
;
Zheng, He
;
Wang, Jianbo
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  |  
浏览/下载:5/0
  |  
提交时间:2019/12/05
m-plane ZnO
MIS
Random lasing
High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO2 and Al2O3/SiO2 Films
期刊论文
http://dx.doi.org/10.1109/LED.2011.2168597, 2011
Zhang, Feng
;
Sun, Guosheng
;
Huang, Huolin
;
Wu, Zhengyun
;
Wang, Lei
;
Zhao, Wanshun
;
Liu, Xingfang
;
Yan, Guoguo
;
Zheng, Liu
;
Dong, Lin
;
Zeng, Yiping
;
吴正云
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2015/07/22
High-performance 4h-sic-based metal-insulator-semiconductor ultraviolet photodetectors with sio2 and al2o3/sio2 films
期刊论文
Ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724
作者:
Zhang, Feng
;
Sun, Guosheng
;
Huang, Huolin
;
Wu, Zhengyun
;
Wang, Lei
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2019/05/12
Metal-insulator-semiconductor (mis) devices
Photodetectors
Ultraviolet (uv) detectors
High-performance 4H-SiC based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3/SiO2 films
期刊论文
ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722
Feng Zhang
;
Guosheng Sun
;
Huolin Huang
;
Zhengyun Wu
;
Lei Wang
;
Wanshun Zhao
;
Xingfang Liu
;
Guoguo Yan
;
Liu Zheng
;
Lin Dong
;
Yiping Zeng
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2012/09/04
Metal–insulator–semiconductor (MIS) devices
photodetectors
ultraviolet (UV) detectors
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