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	High-performance 4h-sic-based metal-insulator-semiconductor ultraviolet photodetectors with sio2 and al2o3/sio2 films
	Zhang, Feng1,2; Sun, Guosheng1,2; Huang, Huolin3; Wu, Zhengyun3; Wang, Lei2; Zhao, Wanshun2; Liu, Xingfang2; Yan, Guoguo2; Zheng, Liu2; Dong, Lin2
刊名	Ieee electron device letters
	2011-12-01
卷号	32期号:12页码:1722-1724
关键词	Metal-insulator-semiconductor (mis) devices Photodetectors Ultraviolet (uv) detectors
ISSN号	0741-3106
DOI	10.1109/led.2011.2168597
通讯作者	Zhang, feng(fzhang@semi.ac.cn)
英文摘要	4h-sic-based metal-insulator-semiconductor (mis) ultraviolet (uv) photodetectors with thermally grown sio2 and evaporated al2o3/sio2 (a/s) films are fabricated and demonstrated as normally-off and normally-on mode devices, respectively. ultralow dark currents of 3.25 x 10(-10) and 9.75 x 10(-9) a/cm(2) and high uv-to-visible rejection ratios of > 2 x 10(3) have been achieved at 10 v. the peak responsivities of these devices were separately 30 ma/w at 260 nm and 50 ma/w at 270 nm at 10 v. these results demonstrate that s/4h-sic and a/s/4h-sic mis photodetectors are promising candidates to be applied in optoelectronic integrated circuits.
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic
语种	英语
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
WOS记录号	WOS:000297352500025
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428322
专题	半导体研究所
通讯作者	Zhang, Feng
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 3.Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Feng,Sun, Guosheng,Huang, Huolin,et al. High-performance 4h-sic-based metal-insulator-semiconductor ultraviolet photodetectors with sio2 and al2o3/sio2 films[J]. Ieee electron device letters,2011,32(12):1722-1724.
APA	Zhang, Feng.,Sun, Guosheng.,Huang, Huolin.,Wu, Zhengyun.,Wang, Lei.,...&Zeng, Yiping.(2011).High-performance 4h-sic-based metal-insulator-semiconductor ultraviolet photodetectors with sio2 and al2o3/sio2 films.Ieee electron device letters,32(12),1722-1724.
MLA	Zhang, Feng,et al."High-performance 4h-sic-based metal-insulator-semiconductor ultraviolet photodetectors with sio2 and al2o3/sio2 films".Ieee electron device letters 32.12(2011):1722-1724.

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