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Mid-infrared surface plasmon resonance sensor based on silicon-doped InAs film and chalcogenide glass fiber 期刊论文
OPTICS AND LASER TECHNOLOGY, 2019, 卷号: 120
作者:  Zhou, Xinlei;  Yu, Qingxu;  Peng, Wei
收藏  |  浏览/下载：19/0  |  提交时间：2019/12/02
Wide spectrum responsivity detectors from visible to mid-infrared based on antimonide 期刊论文
Infrared Physics and Technology, 2019, 卷号: 96, 页码: 1-6
作者:  Guo, Chunyan;  Sun, Yaoyao;  Jia, Qingxuan;  Jiang, Zhi;  Jiang, Dongwei
收藏  |  浏览/下载：102/0  |  提交时间：2018/12/03
Maximizing the Current Output in Self-Aligned Graphene–InAs–Metal Vertical Transistors 期刊论文
ACS Nano, 2019, 卷号: Vol.13 No.1, 页码: 847-854
作者:  Yuan Liu;  Jian Guo;  Enbo Zhu;  Peiqi Wang;  Vincent Gambin
收藏  |  浏览/下载：13/0  |  提交时间：2019/12/13
Maximizing the Current Output in Self-Aligned Graphene–InAs–Metal Vertical Transistors 期刊论文
ACS Nano, 2019, 卷号: Vol.13 No.1, 页码: 847-854
作者:  Yuan Liu;  Jian Guo;  Enbo Zhu;  Peiqi Wang;  Vincent Gambin
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/13
Maximizing the Current Output in Self-Aligned Graphene-InAs-Metal Vertical Transistors. 期刊论文
ACS nano, 2019, 卷号: Vol.13 No.1, 页码: 847-854
作者:  Yuan Liu;  Jian Guo;  Enbo Zhu;  Peiqi Wang;  Vincent Gambin
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/17
Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: Vol.28 No.2, 页码: 028101
作者:  Jing Zhang;  Hongliang Lv;  Haiqiao Ni;  Shizheng Yang;  Xiaoran Cui
收藏  |  浏览/下载：10/0  |  提交时间：2019/12/17
Maximizing the Current Output in Self-Aligned Graphene–InAs–Metal Vertical Transistors 期刊论文
ACS Nano, 2019, 卷号: Vol.13 No.1, 页码: 847-854
作者:  Yuan Liu;  Jian Guo;  Enbo Zhu;  Peiqi Wang;  Vincent Gambin
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/13
Maximizing the Current Output in Self-Aligned Graphene-InAs-Metal Vertical Transistors 期刊论文
ACS NANO, 2019, 卷号: Vol.13 No.1, 页码: 847-854
作者:  Liu, Y;  Guo, J;  Zhu, EB;  Wang, PQ;  Gambin, V
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/17
Light-harvesting for high quantum efficiency in InAs-based InAs/GaAsSb type-II superlattices long wavelength infrared photodetectors 期刊论文
APPLIED PHYSICS LETTERS, 2019, 卷号: 114, 期号: 14, 页码: 141102
作者:  Huang Min;  Chen Jianxin;  Zhou Yi;  Xu Zhicheng;  He Li
收藏  |  浏览/下载：29/0  |  提交时间：2019/11/13
Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 2, 页码: 028101
作者:  Jing Zhang ;   Hongliang Lv ;   Haiqiao Ni ;   Shizheng Yang ;   Xiaoran Cui ;   Zhichuan Niu ;   Yimen Zhang ;   Yuming Zhang
收藏  |  浏览/下载：22/0  |  提交时间：2020/07/30

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