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Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic gan films on gaas(001) substrates 期刊论文
Journal of crystal growth, 2000, 卷号: 212, 期号: 3-4, 页码: 397-401
作者:  Sun, XL;  Yang, H;  Wang, YT;  Zheng, LX;  Xu, DP
收藏  |  浏览/下载:20/0  |  提交时间:2019/05/12
Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates 期刊论文
journal of crystal growth, 2000, 卷号: 212, 期号: 3-4, 页码: 397-401
作者:  Zhao DG
收藏  |  浏览/下载:34/0  |  提交时间:2010/08/12


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