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CORC

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Heteroepitaxial and homoepitaxial nucleation strategies to grow Sb-2 S-3 nanorod arrays and therefrom a derived gain of 7.18%-efficient Sb-2( ) (S,Se)(3 )quasi-nanoarray heterojunction solar cells 期刊论文
APPLIED MATERIALS TODAY, 2022, 卷号: 27
作者:  Liu, Rong;  Dong, Chao;  Zhu, Liangxin;  Chen, Junwei;  Huang, Jia
收藏  |  浏览/下载：19/0  |  提交时间：2022/12/23
Toward Phi 56 mm Al-Polar AlN Single Crystals Grown by the Homoepitaxial PVT Method 期刊论文
Crystal Growth & Design, 2022, 卷号: 22, 期号: 5, 页码: 3462-3470
作者:  D. Y. Fu;  D. Lei;  Z. Li;  G. Zhang;  J. L. Huang
收藏  |  浏览/下载：2/0  |  提交时间：2023/06/14
Simultaneous detection of trace Ag(I) and Cu(II) ions using homoepitaxially grown GaN micropillar electrode 期刊论文
ANALYTICA CHIMICA ACTA, 2020, 卷号: 1100, 页码: 22-30
作者:  Liu, Qingyun;  Li, Jing;  Yang, Wenjin;  Zhang, Xinglai;  Zhang, Cai
收藏  |  浏览/下载：29/0  |  提交时间：2021/02/02
Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 125359
作者:  X.F. Liu;   G.G. Yan;   L. Sang;   Y.X. Niu;   Y.W. He;   Z.W. Shen;   Z.X. Wen;   J. Chen;   W.S. Zhao;   L. Wang;   M. Guan;   F. Zhang;   G.S. Sun;   Y.P. Zeng
收藏  |  浏览/下载：10/0  |  提交时间：2021/11/26
Effect of growth rate on morphology evolution of 4H-SiC thick homoepitaxial layers 期刊论文
Journal of Crystal Growth, 2019, 卷号: Vol.507, 页码: 143-145
作者:  Yingxi Niu;  Xiaoyan Tang;  Pengfei Wu;  Lingyi Kong;  Yun Li
收藏  |  浏览/下载：12/0  |  提交时间：2019/12/13
Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition 期刊论文
Journal of Crystal Growth, 2019, 卷号: 507, 页码: 283-287
作者:  X.F. Liu ;   G.G. Yan ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   Y.W. He ;   W.S. Zhao ;   L. Wang ;   M. Guan ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
收藏  |  浏览/下载：8/0  |  提交时间：2020/07/31
Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers 期刊论文
Journal of Crystal Growth, 2019, 卷号: 55, 页码: 1-4
作者:  G.G. Yan ;   X.F. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   X.H. Zhang ;   X.G. Li ;   G.S. Sun ;   Y.P. Zeng ;   Z.G. Wang
收藏  |  浏览/下载：3/0  |  提交时间：2020/08/04
Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: 504, 页码: 7-12
作者:  X.F. Liu ;   G.G. Yan ;   B. Liu ;   Z.W. Shen ;   Z.X. Wen ;   J. Chen ;   W.S. Zhao ;   L. Wang ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
收藏  |  浏览/下载：29/0  |  提交时间：2019/11/15
Anisotropic Three-Dimensional Thermal Stress Modeling and Simulation of Homoepitaxial AlN Single Crystal Growth by the Physical Vapor Transport Method 期刊论文
CRYSTAL GROWTH & DESIGN, 2018, 卷号: 18, 页码: 2998-3007
作者:  Wang, Qikun[1];  Huang, Jiali[2];  Wang, Zhihao[3];  He, Guangdong[4];  Lei, Dan[5]
收藏  |  浏览/下载：5/0  |  提交时间：2019/04/22
The influence of temperature on the silicon droplet evolution in the homoepitaxial growth of 4H-SiC 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2018, 卷号: Vol.504, 页码: 37-40
作者:  Niu Yingxi;  Tang Xiaoyan;  Sang Ling;  Li Yun;  Kong Lingyi
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/26

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