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Pristine and Cu decorated hexagonal InN monolayer, a promising candidate to detect and scavenge SF6 decompositions based on first-principle study 期刊论文
JOURNAL OF HAZARDOUS MATERIALS, 2019, 卷号: 363
作者:  Chen, Dachang;  Zhang, Xiaoxing;  Tang, Ju;  Cui, Zhaolun;  Cui, Hao
收藏  |  浏览/下载：17/0  |  提交时间：2019/12/05
Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires 期刊论文
NANO LETTERS, 2016, 卷号: 16, 期号: 2
作者:  Wang, P;  Yuan, Y;  Zhao, C;  Wang, XQ;  Zheng, XT
收藏  |  浏览/下载：23/0  |  提交时间：2017/03/11
Controllable growth of InN nanostructures (Invited Review) 期刊论文
Journal of Nanoengineering and Nanomanufacturing, 2012, 卷号: 22, 期号: 2, 页码: 112–122
作者:  Tao Kong(孔涛);  Guosheng Cheng(程国胜);  Guosheng Cheng(程国胜)
收藏  |  浏览/下载：17/0  |  提交时间：2013/01/22
Out-of-plane Quasi-static Compression of Aluminum Hexagonal Honeycomb Cores - a Finite Element Analysis 会议论文
4th International Conference on Technology of Architecture and Structure (ICTAS 2011), Xian Univ Architecture & Technol, Xian, PEOPLES R CHINA, 2011-09-22
作者:  Sun, Deqiang
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/20
Reactant-governing growth direction of indium nitride nanowires 期刊论文
Nanotechnology, 2010, 期号: 24
作者:  Shi L
收藏  |  浏览/下载：9/0  |  提交时间：2010/12/13
Microscopic mechanism of the wurtzite-to-rocksalt phase transition of the group-III nitrides from first principles 期刊论文
2010, 2010
Cai, Jin; Chen, Nanxian
收藏  |  浏览/下载：3/0
Reactant-governing growth direction of indium nitride nanowires 期刊论文
NANOTECHNOLOGY, 2010, 卷号: 21, 期号: 24
Liu, H; Shi, L; Geng, X; Su, R; Cheng, G; Xie, S
收藏  |  浏览/下载：17/0  |  提交时间：2013/09/24
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文
Journal of Physics D-Applied Physics, 2009, 卷号: 42, 期号: 14
作者:  Zhang SM;  Yang H(杨辉)
收藏  |  浏览/下载：6/0  |  提交时间：2010/01/15
Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods 期刊论文
JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 2
作者:  Yang H(杨辉);  Zhang SM
收藏  |  浏览/下载：12/0  |  提交时间：2010/01/15
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
Semiconductor Science and Technology, 2009, 卷号: 24, 期号: 5
作者:  Zhang SM;  Yang H(杨辉)
收藏  |  浏览/下载：7/0  |  提交时间：2010/01/15

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