Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition

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	Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
	Zhang SM; Yang H(杨辉)
刊名	Journal of Physics D-Applied Physics
	2009-07-21
卷号	42 期号:14
通讯作者	Wang H.
合作状况	其它
英文摘要	This paper presents a study on the nucleation and initial growth kinetics of InN on GaN, especially their dependence on metalorganic chemical vapour deposition conditions. It is found that the density and size of separated InN nano-scale islands can be adjusted and well controlled by changing the V/III ratio and growth temperature. InN nuclei density increases for several orders of magnitude with decreasing growth temperature between 525 and 375 ◦C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters less than 100 nm, whereas at elevated temperatures the InN islands grow larger and become well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. The temperature dependence of InN island density gives two activation energies of InN nucleation behaviour, which is attributed to two different kinetic processes related to In adatom surface diffusion and desorption, respectively.
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000267944000054
公开日期	2010-01-15
内容类型	期刊论文
源URL	[http://58.210.77.100/handle/332007/136]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Zhang SM,Yang H. Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition[J]. Journal of Physics D-Applied Physics,2009,42(14).
APA	Zhang SM,&Yang H.(2009).Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition.Journal of Physics D-Applied Physics,42(14).
MLA	Zhang SM,et al."Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition".Journal of Physics D-Applied Physics 42.14(2009).