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浏览/检索结果: 共5条，第1-5条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part II-Experimental Results and Impacts on Device Variability 期刊论文 ieee电子器件汇刊, 2013 Wang, Runsheng; Jiang, Xiaobo; Yu, Tao; Fan, Jiewen; Chen, Jiang; Pan, David Z.; Huang, Ru 收藏  |  浏览/下载：7/0  |  提交时间：2015/11/10 FinFET  line-edge roughness (LER)  line-width roughness (LWR)  nanowire  variability  INTRINSIC PARAMETER FLUCTUATIONS  FINFET MATCHING PERFORMANCE  MOSFETS  DECANANOMETER  NANOWIRES  OXIDATION  NOISE   Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs 期刊论文 ieee 纳米技术汇刊, 2011 Yang, Yunxiang; Yu, Shimeng; Zeng, Lang; Du, Gang; Kang, Jinfeng; Zhao, Yuning; Han, Ruqi; Liu, Xiaoyan 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 Dopant-segregated Schottky MOSFETs (DSS-MOSFETs)  line edge roughness (LER)  Schottky barrier (SB)  technology computer-aided design (TCAD) simulation  variations  INTRINSIC PARAMETER FLUCTUATIONS  FINFET MATCHING PERFORMANCE  BARRIER  DECANANOMETER  IMPACT   Investigation of Nanowire Line-Edge Roughness in Gate-All-Around Silicon Nanowire MOSFETs 期刊论文 ieee电子器件汇刊, 2010 Yu, Tao; Wang, Runsheng; Huang, Ru; Chen, Jiang; Zhuge, Jing; Wang, Yangyuan 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 Intrinsic parameter fluctuation  line-edge roughness (LER)  silicon nanowire MOSFET (SNWT)  variability  INTRINSIC PARAMETER FLUCTUATIONS  FINFET MATCHING PERFORMANCE  CARRIER TRANSPORT  CMOS TECHNOLOGY  IMPACT  TRANSISTORS  DEVICES  DECANANOMETER  VARIABILITY  INTEGRATION   Impact of Line-Edge Roughness on Double-Gate Schottky-Barrier Field-Effect Transistors 期刊论文 ieee电子器件汇刊, 2009 Yu, Shimeng; Zhao, Yuning; Zeng, Lang; Du, Gang; Kang, Jinfeng; Han, Ruqi; Liu, Xiaoyan 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 FinFETs  line-edge roughness (LER)  parameter fluctuations  process variations  Schottky-barrier field-effect transistors (SBFETs)  SRAM stability  INTRINSIC PARAMETER FLUCTUATIONS  FINFET MATCHING PERFORMANCE  YTTERBIUM SILICIDE  SRAM CELLS  MOSFETS  SOURCE/DRAIN  SIMULATION  DEVICES  DECANANOMETER  STABILITY   The impact of line edge roughness on the stability of a FinFET SRAM 期刊论文 semiconductor science and technology, 2009 Yu, Shimeng; Zhao, Yuning; Du, Gang; Kang, Jinfeng; Han, Ruqi; Liu, Xiaoyan 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13 MATCHING PERFORMANCE  DOUBLE-GATE  FLUCTUATIONS  VARIABILITY  MOSFETS  CELLS