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科研机构
北京大学 [14]
西安交通大学 [2]
新疆理化技术研究所 [1]
武汉大学 [1]
内容类型
期刊论文 [12]
其他 [6]
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2019 [1]
2018 [1]
2017 [1]
2015 [7]
2013 [2]
2012 [1]
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Device scaling considerations for sub-90-nm 2-bit/cell split-gate flash memory cell
期刊论文
Solid-State Electronics, 2019, 卷号: 152, 页码: 46-52
作者:
Xu, Zhaozhao
;
Liu, Donghua
;
Hu, Jun
;
Chen, Wenjie
;
Qian, Wensheng
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/11/19
2-bit/cell
Device-scaling
Drain induced barrier lowering effects
Source-side injection
Split gates
Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs
期刊论文
MODERN PHYSICS LETTERS B, 2018, 卷号: 32, 期号: 15
作者:
Liaw, Yue-Gie
;
Chen, Chii-Wen
;
Liao, Wen-Shiang
;
Wang, Mu-Chun
;
Zou, Xuecheng
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/05
SOI FinFET
threshold voltage (V-t)
drive current
short channel effect (SCE)
swing
transconductance (G(m))
drain-induced barrier lowering (DIBL)
source/drain resistance (R-SD)
Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit
期刊论文
SOLID-STATE ELECTRONICS, 2017
Al-Ameri, Talib
;
Georgiev, Vihar P.
;
Sadi, Toufik
;
Wang, Yijiao
;
Adamu-Lema, Fikru
;
Wang, Xingsheng
;
Amoroso, Salvatore M.
;
Towie, Ewan
;
Brown, Andrew
;
Asenov, Asen
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
CMOS
Electrostatics
Nanowire transistors
Performance
Quantum effects
TCAD
GATE
SIMULATION
INVERSION
MULTIGATE
MOSFETS
NM
Correlation between gate length, geometry and electrostatic driven performance in ultra-scaled silicon nanowire transistors
其他
2015-01-01
Al-Ameri, Talib
;
Wang, Y.
;
Georgiev, V.P.
;
Adamu-Lema, F.
;
Wang, X.
;
Asenov, A.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015
Wang, Yijiao
;
Al-Ameri, Talib
;
Wang, Xingsheng
;
Georgiev, Vihar P.
;
Towie, Ewan
;
Amoroso, Salvatore Maria
;
Brown, Andrew R.
;
Cheng, Binjie
;
Reid, David
;
Riddet, Craig
;
Shifren, Lucian
;
Sinha, Saurabh
;
Yeric, Greg
;
Aitken, Robert
;
Liu, Xiaoyan
;
Kang, Jinfeng
;
Asenov, Asen
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
CMOS
electrostatics
nanowire transistors (NWs)
performance
quantum effects
TCAD
STATISTICAL VARIABILITY
INVERSION-LAYERS
GATE
CMOS
GENERATION
ELECTRON
DENSITY
FINFETS
DEVICES
MOSFETS
Comparative study of silicon nanowire transistors with triangular-shaped cross sections
期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015
Zhang, Yi-Bo
;
Sun, Lei
;
Xu, Hao
;
Han, Jing-Wen
;
Wang, Yi
;
Zhang, Sheng-Dong
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
SCHOTTKY-BARRIER SOURCE/DRAIN
MOSFET
PERFORMANCE
SIMULATION
FINFETS
LEAKAGE
Influence of quantum confinement effects over device performance in circular and elliptical silicon nanowire transistors
其他
2015-01-01
Georgiev, V. P.
;
Ali, T.
;
Wang, Y.
;
Gerrer, L.
;
Amoroso, S. M.
;
Asenov, Asen
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2017/12/03
nanowires
simulations
quantum effects
scalling of tranistors
CMOS devices
Influence of quantum confinement effects over device performance in circular and elliptical silicon nanowire transistors
其他
2015-01-01
Georgiev, V.P.
;
Ali, T.
;
Wang, Y.
;
Gerrer, L.
;
Amoroso, S.M.
;
Asenov, Asen
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/03
Correlation between Gate Length, Geometry and Electrostatic Driven Performance in Ultra-Scaled Silicon Nanowire Transistors
其他
2015-01-01
Al-Ameri, Talib
;
Wang, Y.
;
Georgiev, V. P.
;
Adamu-Lema, F.
;
Wang, X.
;
Asenov, A.
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2017/12/03
CMOS
electrostatics
nanowire transistors
performance
quantum effects
TCAD
Comparative study of silicon nanowire transistors with triangular-shaped cross sections
其他
2015-01-01
Zhang, Yi-Bo
;
Sun, Lei
;
Xu, Hao
;
Han, Jing-Wen
;
Wang, Yi
;
Zhang, Sheng-Dong
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2017/12/04
SCHOTTKY-BARRIER SOURCE/DRAIN
MOSFET
PERFORMANCE
SIMULATION
FINFETS
LEAKAGE
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