CORC

浏览/检索结果: 共11条,第1-10条 帮助

已选(0)清除 条数/页:   排序方式:
Large area and uniform CVD synthesized monolayer graphene on oxidized copper in a cold wall reactor 会议论文
IMAPS Nordic Annual Conference 2016, 2016-06-05
作者:  Mu, Wei[1];  Fu, Yifeng[2];  Edwards, Michael[3];  Jeppson, Kjell[4];  Liu, Johan[5]
收藏  |  浏览/下载:3/0  |  提交时间:2019/04/26
Controllable and fast synthesis of bilayer graphene by chemical vapor deposition on copper foil using a cold wall reactor 期刊论文
CHEMICAL ENGINEERING JOURNAL, 2016, 卷号: 304, 页码: 106-114
作者:  Mu, Wei[1];  Fu, Yifeng[2];  Sun, Shuangxi[3];  Edwards, Michael[4];  Ye, Lilei[5]
收藏  |  浏览/下载:7/0  |  提交时间:2019/04/26
Enhanced cold wall CVD reactor growth of horizontally aligned single-walled carbon nanotubes 期刊论文
ELECTRONIC MATERIALS LETTERS, 2016, 卷号: 12, 页码: 329-337
作者:  Mu, Wei[1];  Kwak, Eun-Hye[2];  Chen, Bingan[3];  Huang, Shirong[4];  Edwards, Michael[5]
收藏  |  浏览/下载:4/0  |  提交时间:2019/04/26
Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates 期刊论文
journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46
Su SJ; Wang W; Cheng BW; Zhang GZ; Hu WX; Xue CL; Zuo YH; Wang QM
收藏  |  浏览/下载:72/4  |  提交时间:2011/07/05
Tensile and compressive mechanical behavior of twinned silicon carbide nanowires 期刊论文
acta materialia, 2010, 卷号: 58, 期号: 6, 页码: 1963-1971
作者:  Li JB
收藏  |  浏览/下载:63/1  |  提交时间:2010/04/22
Synthesis of Isotopically-Labeled Graphite Films by Cold-Wall Chemical Vapor Deposition and Electronic Properties of Graphene Obtained from Such Films 期刊论文
NANO RESEARCH, 2009, 卷号: 2, 期号: 11, 页码: 851
Cai, WW; Piner, RD; Zhu, YW; Li, XS; Tan, ZB; Floresca, HC; Yang, CL; Lu, L; Kim, MJ; Ruoff, RS
收藏  |  浏览/下载:16/0  |  提交时间:2013/09/24
DIAMOND  GROWTH  OXIDE  
Controlling electronic structures by irradiation in single-walled SiC nanotubes: a first-principles molecular dynamics study 期刊论文
nanotechnology, 2009, 卷号: 20, 期号: 7, 页码: art. no. 075708
作者:  Li JB
收藏  |  浏览/下载:165/21  |  提交时间:2010/03/08
水平冷壁CVD生长4H-SiC同质外延膜 期刊论文
半导体学报/Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2005, 卷号: 26, 期号: 5, 页码: 935-940
作者:  高欣;  孙国胜;  李晋闽;  赵万顺;  王雷
收藏  |  浏览/下载:3/0  |  提交时间:2015/04/27
Growth of SiGe Films by Cold-wall UHV/CVD Using GeH_4 and Si_2H_6 期刊论文
semiconductor photonics and technology, 2000, 卷号: 6, 期号: 3, 页码: 134
作者:  Wang Yutian;  Cheng Buwen
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/23
Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(001) substrate measured by a series of symmetric double crystal X-ray diffraction 期刊论文
journal of crystal growth, 1998, 卷号: 191, 期号: 4, 页码: 627-630
Wang HM; Zeng YP; Zhou HW; Kong MY
收藏  |  浏览/下载:52/0  |  提交时间:2010/08/12


©版权所有 ©2017 CSpace - Powered by CSpace