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A radiation-hardening Ta/Ta2O5-x/Al2O3/InGaZnO4 memristor for harsh electronics 期刊论文
APPLIED PHYSICS LETTERS, 2018, 卷号: 113
作者:  Wang, Jingjuan;  Ren, Deliang;  Zhang, Zichang;  Xiang, Hongwen;  Zhao, Jianhui
收藏  |  浏览/下载:17/0  |  提交时间:2019/11/26
Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors 期刊论文
APPLIED PHYSICS LETTERS, 2017
Chiang, Hsiao-Cheng; Chang, Ting-Chang; Liao, Po-Yung; Chen, Bo-Wei; Tsao, Yu-Ching; Tsai, Tsung-Ming; Chien, Yu-Chieh; Yang, Yi-Chieh; Chen, Kuan-Fu; Yang, Chung-I; Hung, Yu-Ju; Chang, Kuan-Chang; Zhang, Sheng-Dong; Lin, Sung-Chun; Yeh, Cheng-Yen
收藏  |  浏览/下载:6/0  |  提交时间:2017/12/03
Modification of band alignments and optimization of electrical properties of InGaZnO MOS capacitors with high-k HfOxNy gate dielectrics 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 679, 期号: 无, 页码: 115-121
作者:  Zheng, C. Y.;  He, G.;  Chen, X. F.;  Liu, M.;  Lv, J. G.
收藏  |  浏览/下载:19/0  |  提交时间:2017/10/18
Band offsets in HfTiO/InGaZnO4 heterojunction determined by X-ray photoelectron spectroscopy 期刊论文
Journal of Alloys and Compounds, 2015, 卷号: Vol.642, 页码: 172-176
作者:  J.G. Lv;  X.F. Chen;  Z.Q. Sun;  Y.M. Liu;  K.R. Zhu
收藏  |  浏览/下载:2/0  |  提交时间:2019/04/22
Modification of band offsets of InGaZnO4/Si heterojunction through nitrogenation treatment 期刊论文
Journal of Alloys and Compounds, 2015, 卷号: Vol.647, 页码: 1035-1039
作者:  J.G. Lv;  X.F. Chen;  Z.Q. Sun;  P.H. Wang;  X.S. Chen
收藏  |  浏览/下载:3/0  |  提交时间:2019/04/24
Band offsets in ZrO2/InGaZnO4 heterojunction 期刊论文
应用物理学快报, 2012
Yao, Jianke; Zhang, Shengdong; Gong, Li
收藏  |  浏览/下载:3/0  |  提交时间:2015/11/12


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