Band offsets in ZrO2/InGaZnO4 heterojunction

doi:10.1063/1.4750069

CORC > 北京大学 > 信息科学技术学院

	Band offsets in ZrO2/InGaZnO4 heterojunction
	Yao, Jianke ; Zhang, Shengdong ; Gong, Li
刊名	应用物理学快报
	2012
关键词	AMORPHOUS OXIDE SEMICONDUCTORS RAY PHOTOELECTRON-SPECTROSCOPY K GATE OXIDES TRANSISTORS
DOI	10.1063/1.4750069
英文摘要	X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band (Delta E-V) of amorphous InGaZnO4 (a-IGZO)/ZrO2 heterostructure deposited by DC and RF sputtering at room temperature, respectively. A value of Delta E-V = 0 eV was obtained by using the Ga and Zn 2p(3) and In 3d(3) energy levels as references. Given the experimental band gap of 3.1 eV and 5.8 eV for the a-IGZO and ZrO2, respectively, this would indicate a conduction band offset of 2.7 eV in the system. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4750069]; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000308408100081&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Applied; SCI(E); EI; 10; ARTICLE; 9; 101
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/231644]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yao, Jianke,Zhang, Shengdong,Gong, Li. Band offsets in ZrO2/InGaZnO4 heterojunction[J]. 应用物理学快报,2012.
APA	Yao, Jianke,Zhang, Shengdong,&Gong, Li.(2012).Band offsets in ZrO2/InGaZnO4 heterojunction.应用物理学快报.
MLA	Yao, Jianke,et al."Band offsets in ZrO2/InGaZnO4 heterojunction".应用物理学快报 (2012).