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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 专题：兰州理工大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effects of Liquid Nitrogen Shock Chilling on the Performance of Hydrogenated Amorphous Carbon Films 会议论文 作者:  Wang, Zhaolong;  Xue, Yong;  Zhang, Bin;  Gao, Kaixiong;  Qiang, Li 收藏  |  浏览/下载：4/0  |  提交时间：2020/12/18 Amorphous carbon  Friction  Hydrogenation  Liquefied gases  Liquid nitrogen  Plasma CVD  Plasma enhanced chemical vapor deposition  Thermodynamic stability  Wear of materialsa-C:H films  Elastic recovery  Friction coefficients  Hydrogenated amorphous carbon films  Plasma enhanced chemical vapor deposition systems  Wear volume   Effects of Liquid Nitrogen Shock Chilling on the Performance of Hydrogenated Amorphous Carbon Films 期刊论文 Mocaxue Xuebao/Tribology, 2020, 卷号: 40, 期号: 1, 页码: 82-88 作者:  Wang, Zhaolong;  Xue, Yong;  Zhang, Bin;  Gao, Kaixiong;  Qiang, Li 收藏  |  浏览/下载：2/0  |  提交时间：2020/11/14 Amorphous carbon  Friction  Hydrogenation  Liquefied gases  Liquid nitrogen  Plasma CVD  Plasma enhanced chemical vapor deposition  Thermodynamic stability  Wear of materials  a-C:H films  Elastic recovery  Friction coefficients  Hydrogenated amorphous carbon films  Plasma enhanced chemical vapor deposition systems  Wear volume   Synthesis and characterization of β-Ga2O3 Nanorod Array Clumps by Chemical Vapor Deposition 期刊论文 Journal of Nanoscience and Nanotechnology, 2012, 卷号: 12, 期号: 11, 页码: 8481-8486 作者:  Shi, Feng;  Wei, Xiaofeng 收藏  |  浏览/下载：8/0  |  提交时间：2020/11/14 Chemical vapor deposition  Crystal growth  Defects  Gallium compounds  High resolution transmission electron microscopy  Morphology  Nanorods  Oxygen vacancies  Photoluminescence  Photoluminescence spectroscopy  Scanning electron microscopy  X ray photoelectron spectroscopy  Fourier transform infrared spectrophotometry  Growth mechanisms  Growth theory  Light emitting properties  Photoluminescence spectrum  Si(111) substrate  Synthesis and characterizations  Vapor-liquid-solid process