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CORC

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Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition 期刊论文
physica status solidi a-applications and materials science, 2011, 卷号: 208, 期号: 4, 页码: 843-850
Zhu BL; Zhu SJ; Zhao XZ; Su FH; Li GH; Wu XG; Wu J
收藏  |  浏览/下载：96/5  |  提交时间：2011/07/05
First principles study of p-type doping in SiC nanowires: role of quantum effect 期刊论文
journal of nanoparticle research, 2011, 卷号: 13, 期号: 7, 页码: 2887-2892
作者:  Li JB
收藏  |  浏览/下载：45/4  |  提交时间：2011/07/07
Formation of shallow acceptors in ZnO doped by lithium with the addition of nitrogen 期刊论文
journal of physics and chemistry of solids, 2011, 卷号: 72, 期号: 6, 页码: 725-729
Gai, Yanqin; Tang, Gang; Li, Jingbo
收藏  |  浏览/下载：32/0  |  提交时间：2012/06/14
Co doping enhanced giant magnetocaloric effect in Mn1-xCoxAs films epitaxied on GaAs (001) 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 4, 页码: art. no. 042502
Xu PF (Xu P. F.); Nie SH (Nie S. H.); Meng KK (Meng K. K.); Wang SL (Wang S. L.); Chen L (Chen L.); Zhao JH (Zhao J. H.)
收藏  |  浏览/下载：92/4  |  提交时间：2010/09/07
Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films 期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 4, 页码: art. no. 041901
作者:  Yang H;  Wang H;  Wang H;  Wang YT;  Yang H
收藏  |  浏览/下载：64/1  |  提交时间：2010/03/08
Enhanced mid-infrared transmission in heavily doped n-type semiconductor film based on surface plasmons 期刊论文
acta physica sinica, 2008, 卷号: 57, 期号: 11, 页码: 7210-7215
Hua, L; Song, GF; Guo, BS; Wang, WM; Zhang, Y
收藏  |  浏览/下载：58/0  |  提交时间：2010/03/08
p-type doping of GaInNAs quaternary alloys 期刊论文
physics letters a, 2008, 卷号: 373, 期号: 1, 页码: 165-168
Shi HL; Duan YF
收藏  |  浏览/下载：234/53  |  提交时间：2010/03/08
First-principle study of extrinsic defects in CuScO2 and CuYO2 期刊论文
physics letters a, 2008, 卷号: 372, 期号: 21, 页码: 3759-3762
Fang, ZJ; Shi, LJ
收藏  |  浏览/下载：61/7  |  提交时间：2010/03/08
CuMO2  doping  VASP  
Silicon doping induced increment of quantum dot density 期刊论文
japanese journal of applied physics part 1-regular papers short notes & review papers, 2003, 卷号: 42, 期号: 10, 页码: 6314-6318
作者:  Duan RF
收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12
Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures 会议论文
international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000
作者:  Han PD
收藏  |  浏览/下载：16/0  |  提交时间：2010/10/29

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