Formation of shallow acceptors in ZnO doped by lithium with the addition of nitrogen

	Formation of shallow acceptors in ZnO doped by lithium with the addition of nitrogen
	Gai, Yanqin ; Tang, Gang ; Li, Jingbo
刊名	journal of physics and chemistry of solids
	2011
卷号	72 期号:6 页码:725-729
关键词	Activation energy Binding energy Calculations Complexation Doping(additives) Electronic structure Zinc Zinc oxide
ISSN号	00223697
通讯作者	gai, y.(yqgai@semi.ac.cn)
学科主题	半导体物理
收录类别	EI
语种	英语
公开日期	2012-06-14
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/23061]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Gai, Yanqin,Tang, Gang,Li, Jingbo. Formation of shallow acceptors in ZnO doped by lithium with the addition of nitrogen[J]. journal of physics and chemistry of solids,2011,72(6):725-729.
APA	Gai, Yanqin,Tang, Gang,&Li, Jingbo.(2011).Formation of shallow acceptors in ZnO doped by lithium with the addition of nitrogen.journal of physics and chemistry of solids,72(6),725-729.
MLA	Gai, Yanqin,et al."Formation of shallow acceptors in ZnO doped by lithium with the addition of nitrogen".journal of physics and chemistry of solids 72.6(2011):725-729.