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半导体研究所 [16]

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期刊论文 [16]

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半导体材料 [16]

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限定条件	学科主题：半导体材料

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	Fabrication and property investigation of the highly ordered TiO2 nanotube arrays 期刊论文 gao xiao hua xue gong cheng xue bao/journal of chemical engineering of chinese universities, 2011, 卷号: 25, 期号: 3, 页码: 507-512 Lan, Yu-Wei; Zhou, Li-Ya; Tong, Zhang-Fa; Pang, Qi; Leng, Li-Min; Han, Jian-Peng; Wang, Fan 收藏 \| 浏览/下载：20/0 \| 提交时间：2012/06/14 Anodic oxidation Azo dyes Degradation Ethylene Ethylene glycol Fabrication Mercury(metal) Photocatalysis Photodegradation Scanning electron microscopy Titanium Titanium dioxide X ray diffraction X ray diffraction analysis
	Structures and optical characteristics of InGaN quantum dots grown by MBE 期刊论文 xiyou jinshu cailiao yu gongcheng/rare metal materials and engineering, 2011, 卷号: 40, 期号: 11, 页码: 2030-2032 Wang, Baozhu; Yan, Cuiying; Wang, Xiaoliang 收藏 \| 浏览/下载：22/0 \| 提交时间：2012/06/14 Atomic force microscopy Gallium nitride Molecular beam epitaxy Optical materials Optical properties Reflection high energy electron diffraction Sapphire
	Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy 期刊论文 journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495 Zhao J (Zhao Jie); Zeng YP (Zeng Yiping); Liu C (Liu Chao); Li YB (Li Yanbo) 收藏 \| 浏览/下载：148/33 \| 提交时间：2010/06/04 Reflection high-energy electron diffraction Atomic force microscopy Molecular beam epitaxy Zinc compounds Semiconducting II-VI materials
	Growth behavior of AlInGaN films 期刊论文 journal of crystal growth, 2009, 卷号: 311, 期号: 3, 页码: 474-477 Shang JZ; Zhang BP; Mao MH; Cai LE; Zhang JY; Fang ZL; Liu BL; Yu JZ; Wang QM; Kusakabe K; Ohkawa K 收藏 \| 浏览/下载：216/66 \| 提交时间：2010/03/08 Scanning electron microscope Strain X-ray diffraction AlInGaN
	Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer 期刊论文 materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237 作者: Zhao J 收藏 \| 浏览/下载：43/4 \| 提交时间：2011/07/05 ZnO Pulsed laser deposition X-ray diffraction Photoluminescence Reflection high-energy electron diffraction PULSED-LASER DEPOSITION THIN-FILMS PLD TECHNIQUE GROWTH SAPPHIRE TEMPERATURE
	QtUCP-A program for determining unit-cell parameters in electron diffraction experiments using double-tilt and rotation-tilt holders 期刊论文 ultramicroscopy, 2008, 卷号: 108, 期号: 12, 页码: 1540-1545 Zhao HS; Wu DQ; Yao JC; Chang AM 收藏 \| 浏览/下载：45/0 \| 提交时间：2010/03/08 Electron diffraction
	Effect of Nitridation on Morphology, Structural Properties and Stress of AIN Films 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 12, 页码: 4364-4367 作者: Wei HY; Jiao CM 收藏 \| 浏览/下载：178/45 \| 提交时间：2010/03/08 TRANSMISSION ELECTRON-MICROSCOPY WURTZITE-TYPE CRYSTALS VAPOR-PHASE EPITAXY INTRINSIC STRESS SAPPHIRE SURFACE THIN-FILMS GAN GROWTH DIFFRACTION MECHANISM
	Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition 期刊论文 journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 416-423 Hu GQ; Kong X; Wan L; Wang YQ; Duan XF; Lu Y; Liu XL 收藏 \| 浏览/下载：25/0 \| 提交时间：2010/08/12 amorphous layer dislocation transmission electron microscopy metalorganic chemical vapor deposition GaN MOLECULAR-BEAM EPITAXY HIGH-QUALITY GAN HETEROEPITAXIAL GROWTH ELECTRON-DIFFRACTION DEFECT STRUCTURE HETEROSTRUCTURE DISLOCATIONS MICROSCOPY (111)SI LAYER
	Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy 期刊论文 journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 9-13 Shen XM; Feng G; Zhang BS; Duan LH; Wang YT; Yang H 收藏 \| 浏览/下载：38/0 \| 提交时间：2010/08/12 scanning electron microscopy X-ray diffraction Metalorganic vapor phase epitaxy selective area growth gallium nitride CUBIC GAN OVERGROWN GAN DEPOSITION GAAS(100)
	GdxSi grown with mass-analyzed low energy dual ion beam epitaxy technique 期刊论文 journal of crystal growth, 2002, 卷号: 242, 期号: 3-4, 页码: 389-394 Zhou JP; Chen NF; Zhang FQ; Song SL; Chai CL; Yang SY; Liu ZK; Lin LY 收藏 \| 浏览/下载：54/0 \| 提交时间：2010/08/12 Auger electron spectroscopy X-ray diffraction X-ray photoelectron spectroscopy ion beam epitaxy semiconducting gadolinium silicide SEMICONDUCTING SILICIDES MAGNETIC SEMICONDUCTORS TRANSITION INSULATOR SILICON FILMS

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