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| Improved Ti germanosilicidation by Ge pre-amorphization implantation (PAI) for advanced contact technologies 期刊论文
Microelectronic Engineering, 2018
作者: Mao SJ(毛淑娟) ; Wang GL(王桂磊); Xu J(许静); Zhang D(张丹); Luo X(罗雪)
  收藏 | 浏览/下载：46/0 | 提交时间：2019/05/05
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| Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts 期刊论文
IEEE Transactions on Electron Devices, 2018
作者: Ye TC(叶甜春); Mao SJ(毛淑娟); Wang GL(王桂磊); Xu J(许静); Luo X(罗雪)
收藏 | 浏览/下载：38/0 | 提交时间：2019/05/05 |
| Enhancing the thermal stability of NiGe by prior-germanidation fluorine implantation into Ge substrate 期刊论文
Japanese Journal of Applied Physics, 2018
作者: Zhang D(张丹); Wang WW(王文武); Chen DP(陈大鹏); Li JF(李俊峰); Liu S(刘实)
收藏 | 浏览/下载：21/0 | 提交时间：2019/05/20 |
| Impact of Ge pre-amorphization implantation on forming ultrathin TiGe x on both n-and p-Ge substrate 期刊论文
Japanese Journal of Applied Physics, 2018
作者: Liu S(刘实); Li JF(李俊峰); Wang WW(王文武); Chen DP(陈大鹏); Zhao C(赵超)
收藏 | 浏览/下载：11/0 | 提交时间：2019/05/20 |
| On the manifestation ofGe Pre-amorphization Implantation (PAI) in forming ultrathin TiSix for Ti direct contact on Si in sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology nodes 期刊论文
ECS Journal of Solid State Science and Technology, 2017
作者: Wang GL(王桂磊); Li JF(李俊峰); Zhao C(赵超); Ye TC(叶甜春); Chen DP(陈大鹏)
收藏 | 浏览/下载：44/0 | 提交时间：2018/06/08 |
| Attainment of dual-band edge work function by using a single metal gate and single high-k dielectric via ion implantation for HP CMOS device 期刊论文
Solid-State Electronics, 2016
作者: Xu GB(许高博); Zhou HJ(周华杰); Zhu HL(朱慧珑); Liu JB(刘金彪); Wang Y(王垚)
收藏 | 浏览/下载：28/0 | 提交时间：2017/05/09 |
| P型MOSFET的制造方法 专利
专利号: US9196706, 申请日期: 2015-11-24, 公开日期: 2014-06-05
作者: 徐秋霞; 叶甜春; 朱慧珑; 周华杰; 许高博
收藏 | 浏览/下载：10/0 | 提交时间：2016/09/19 |
| Ion-Implanted TiN Metal Gate With Dual Band-Edge Work Function and Excellent Reliability for Advanced CMOS Device Applications 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015
作者: Zhu HL(朱慧珑); Liang QQ(梁擎擎); Liu JB(刘金彪); Li JF(李俊峰); Xiang JJ(项金娟)
收藏 | 浏览/下载：11/0 | 提交时间：2016/05/31 |
| Investigation of TaN as the wet etch stop layer for HKMG-last integration in the 22 nm and beyond nodes CMOS technology 期刊论文
Vacuum, 2015
作者: Cui HS(崔虎山); Luo J(罗军); Xu J(许静); Gao JF(高建峰); Xiang JJ(项金娟)
收藏 | 浏览/下载：20/0 | 提交时间：2016/05/31 |
| Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2015
作者: Chen DP(陈大鹏); Ye TC(叶甜春); Zhu HL(朱慧珑); Yin HX(殷华湘); Xu M(许淼)
收藏 | 浏览/下载：10/0 | 提交时间：2016/05/31 |
