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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils 期刊论文 ACS NANO, 2017 Zhang, Zhepeng; Ji, Xujing; Shi, Jianping; Zhou, Xiebo; Zhang, Shuai; Hou, Yue; Qi, Yue; Fang, Qiyi; Ji, Qingqing; Zhang, Yu; Hong, Min; Yang, Pengfei; Liu, Xinfeng; Zhang, Qing; Liao, Lei; Jin, Chuanhong; Liu, Zhongfan; Zhang, Yanfeng 收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03 chemical vapor deposition growth  MoS2/h-BN  Au foil  van der Waals heterostructure  transfer  HEXAGONAL BORON-NITRIDE  MONOLAYER MOLYBDENUM-DISULFIDE  ELECTRONIC-PROPERTIES  LARGE-AREA  THERMAL-EXPANSION  HIGH-QUALITY  LAYER MOS2  H-BN  GRAPHENE  EVOLUTION   Strong Adlayer-Substrate Interactions "Break" the Patching Growth of h-BN onto Graphene on Re(0001) 期刊论文 ACS NANO, 2017 Qi, Yue; Han, Nannan; Li, Yuanchang; Zhang, Zhepeng; Zhou, Xiebo; Deng, Bing; Li, Qiucheng; Liu, Mengxi; Zhao, Jijun; Liu, Zhongfan; Zhang, Yanfeng 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 graphene and hexagonal boron nitride heterostructures  ultra-high-vacuum scanning tunneling microscopy/spectroscopy  preferable nucleation  edges of Re steps and graphene domains  HEXAGONAL BORON-NITRIDE  DER-WAALS HETEROSTRUCTURES  CHEMICAL-VAPOR-DEPOSITION  LIGHT-EMITTING-DIODES  INPLANE HETEROSTRUCTURES  ELECTRONIC-PROPERTIES  MOLYBDENUM-DISULFIDE  ATOMIC LAYERS  INTERFACE  BOUNDARY   Quasi-freestanding, striped WS2 monolayer with an invariable band gap on Au(001) 期刊论文 NANO RESEARCH, 2017 Hong, Min; Zhou, Xiebo; Shi, Jianping; Qi, Yue; Zhang, Zhepeng; Fang, Qiyi; Guo, Yaguang; Sun, Yajuan; Liu, Zhongfan; Li, Yuanchang; Wang, Qian; Zhang, Yanfeng 收藏  |  浏览/下载：9/0  |  提交时间：2017/12/03 WS2  Au(001)  striped superstructure  interfacial interaction  STM/STS  HEXAGONAL BORON-NITRIDE  SINGLE-LAYER MOS2  MOLYBDENUM-DISULFIDE  ELECTRONIC-PROPERTIES  GRAIN-BOUNDARIES  HETEROSTRUCTURES  GRAPHENE  PHOTOLUMINESCENCE  DEFECTS   Two-dimensional metallic tantalum disulfide as a hydrogen evolution catalyst 期刊论文 NATURE COMMUNICATIONS, 2017 Shi, Jianping; Wang, Xina; Zhang, Shuai; Xiao, Lingfeng; Huan, Yahuan; Gong, Yue; Zhang, Zhepeng; Li, Yuanchang; Zhou, Xiebo; Hong, Min; Fang, Qiyi; Zhang, Qing; Liu, Xinfeng; Gu, Lin; Liu, Zhongfan; Zhang, Yanfeng 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 CHARGE-DENSITY-WAVE  CHEMICAL-VAPOR-DEPOSITION  ACTIVE EDGE SITES  PHASE-TRANSITIONS  GRAIN-BOUNDARY  ATOMIC LAYERS  MOS2  NANOSHEETS  1T-TAS2  GROWTH   Irreparable Defects Produced by the Patching of h-BN Frontiers on Strongly Interacting Re(0001) and Their Electronic Properties 期刊论文 JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2017 Qi, Yue; Zhang, Zhepeng; Deng, Bing; Zhou, Xiebo; Li, Qiucheng; Hong, Min; Li, Yuanchang; Liu, Zhongfan; Zhang, Yanfeng 收藏  |  浏览/下载：7/0  |  提交时间：2017/12/03 HEXAGONAL BORON-NITRIDE  CHEMICAL-VAPOR-DEPOSITION  SCANNING-TUNNELING-MICROSCOPY  POINT-DEFECTS  GRAPHENE HETEROSTRUCTURES  STACKED GRAPHENE  EPITAXIAL-GROWTH  SINGLE-CRYSTAL  MONOLAYER  MORPHOLOGY   Progress in Controllable Construction and Energy-Related Applications of MX2/Graphene and MX2/MX2 Heterostructures 期刊论文 CHEMNANOMAT, 2017 Yang, Pengfei; Zhang, Zhepeng; Shi, Jianping; Jiang, Shaolong; Zhang, Yanfeng 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 chemical vapor deposition  energy-related application  graphene  heterostructure  MX2  TRANSITION-METAL DICHALCOGENIDES  CHEMICAL-VAPOR-DEPOSITION  DER-WAALS HETEROSTRUCTURES  FIELD-EFFECT TRANSISTOR  LITHIUM ION BATTERIES  TIGHTLY BOUND TRIONS  SINGLE-LAYER MOS2  P-N-JUNCTION  MONOLAYER MOS2  2-DIMENSIONAL MATERIALS   Transformation of monolayer MoS2 into multiphasic MOTe2: Chalcogen atom-exchange synthesis route 期刊论文 纳米研究（英文版）, 2017 Qiyi Fang; Zhepeng Zhang; Qingqing Ji; Siya Zhu; Yue Gong; Yu Zhang; Jianping Shi; Xiebo Zhou; Lin Gu; Qian Wang; Yanfeng Zhang 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 transition-metal dichacogenide MoTe2 atom exchange multiphase phase transformation  transition-metal dichacogenide  MoTe2  atom exchange  multiphase  phase transformation  CHEMICAL-VAPOR-DEPOSITION  TRANSITION-METAL DICHALCOGENIDES  FEW-LAYER MOTE2  OPTICAL-PROPERTIES  CATION-EXCHANGE  SINGLE-CRYSTAL  THIN-FILMS  BAND-GAP  GROWTH  PHASE   Periodic Modulation of the Doping Level in Striped MoS2 Superstructures 期刊论文 ACS NANO, 2016 Zhou, Xiebo; Shi, Jianping; Qi, Yue; Liu, Mengxi; Ma, Donglin; Zhang, Yu; Ji, Jugging; Zhang, Zhepeng; Li, Cong; Liu, Zhongfan; Zhang, Yanfeng 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 molybdenum disulfide  scanning tunneling microscope/spectroscopy  atomic structure  doping level  Au(100)  SINGLE-LAYER MOS2  TRANSITION-METAL DICHALCOGENIDES  MONOLAYER MOLYBDENUM-DISULFIDE  GRAIN-BOUNDARIES  AU FOILS  GROWTH  BANDGAP  PHOTOLUMINESCENCE  NANOPARTICLES  SPECTROSCOPY   Fast and uniform growth of graphene glass using confined-flow chemical vapor deposition and its unique applications 期刊论文 NANO RESEARCH, 2016 Chen, Zhaolong; Guan, Baolu; Chen, Xu-dong; Zeng, Qing; Lin, Li; Wang, Ruoyu; Priydarshi, Manish Kr.; Sun, Jingyu; Zhang, Zhepeng; Wei, Tongbo; Li, Jinmin; Zhang, Yanfeng; Zhang, Yingying; Liu, Zhongfan 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 graphene glass  confined-flow chemical vapor deposition  transparent heating device  epitaxial AlN film  FEW-LAYER GRAPHENE  HIGH-QUALITY  LARGE-AREA  EPITAXIAL GRAPHENE  METAL-CATALYST  BORON-NITRIDE  SINGLE-LAYER  FILMS  TRANSPARENT  SAPPHIRE   Temperature-Mediated Selective Growth of MoS2/WS2 and WS2/MoS2 Vertical Stacks on Au Foils for Direct Photocatalytic Applications 期刊论文 ADVANCED MATERIALS, 2016 Shi, Jianping; Tong, Rui; Zhou, Xiebo; Gong, Yue; Zhang, Zhepeng; Ji, Qingqing; Zhang, Yu; Fang, Qiyi; Gu, Lin; Wang, Xina; Liu, Zhongfan; Zhang, Yanfeng 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 MoS2,WS2,electron-hole separation,photocatalysis,vertical heterostructures  CHEMICAL-VAPOR-DEPOSITION  TRANSITION-METAL DICHALCOGENIDES  VISIBLE-LIGHT IRRADIATION  HEXAGONAL BORON-NITRIDE  INPLANE HETEROSTRUCTURES  EPITAXIAL-GROWTH  MONOLAYER MOS2  H-2 EVOLUTION  HIGH-QUALITY  LAYER MOS2