Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of   MoS2/h-BN van der Waals Heterostructures on Au Foils

doi:10.1021/acsnano.7b01537

CORC > 北京大学 > 化学与分子工程学院

	Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils
	Zhang, Zhepeng ; Ji, Xujing ; Shi, Jianping ; Zhou, Xiebo ; Zhang, Shuai ; Hou, Yue ; Qi, Yue ; Fang, Qiyi ; Ji, Qingqing ; Zhang, Yu ; Hong, Min ; Yang, Pengfei ; Liu, Xinfeng ; Zhang, Qing ; Liao, Lei ; Jin, Chuanhong ; Liu, Zhongfan ; Zhang, Yanfeng
刊名	ACS NANO
	2017
关键词	chemical vapor deposition growth MoS2/h-BN Au foil van der Waals heterostructure transfer HEXAGONAL BORON-NITRIDE MONOLAYER MOLYBDENUM-DISULFIDE ELECTRONIC-PROPERTIES LARGE-AREA THERMAL-EXPANSION HIGH-QUALITY LAYER MOS2 H-BN GRAPHENE EVOLUTION
DOI	10.1021/acsnano.7b01537
英文摘要	Stacked transition-metal dichalcogenides on hexagonal boron nitride (h-BN) are platforms for high-performance electronic devices. However, such vertical stacks are usually constructed by the layer-by-layer polymer-assisted transfer of mechanically exfoliated layers. This inevitably causes interfacial contamination and device performance degradation. Herein, we develop a two-step, low-pressure chemical vapor deposition synthetic strategy incorporating the direct growth of monolayer h-BN on Au foil with the subsequent growth of MoS2. In such vertical stacks, the interactions between MoS2 and Au are diminished by the intervening h-BN layer, as evidenced by the appearance of photoluminescence in MoS2. The weakened interfacial interactions facilitate the transfer of the MoS2/h-BN stacks from Au to arbitrary substrates by an electrochemical bubbling method. Scanning tunneling microscope/spectroscopy characterization shows that the central h-BN layer partially blocks the metal-induced gap states in MoS2/h-BN/Au foils. The work offers insight into the synthesis, transfer, and device performance optimization of such vertically stacked heterostructures.; National Key Research and Development Program of China [2016YFA0200103, 2016YFA0200700]; National Natural Science Foundation of China [51290272, 51472008, 21201012, 51121091, 51072004, 51201069]; National Basic Research Program of China [2013CB932603, 2014CB932500]; Beijing Municipal Science and Technology Planning Project [Z151100003315013]; Young Thousand Talented Program, from Peking University [Y5862911ZX]; 100-Talents Program of Chinese Academy of Sciences [Y5862912ZX]; Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics [KF201601]; SCI(E); ARTICLE; 4; 4328-4336; 11
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/474225]
专题	化学与分子工程学院工学院
推荐引用方式 GB/T 7714	Zhang, Zhepeng,Ji, Xujing,Shi, Jianping,et al. Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils[J]. ACS NANO,2017.
APA	Zhang, Zhepeng.,Ji, Xujing.,Shi, Jianping.,Zhou, Xiebo.,Zhang, Shuai.,...&Zhang, Yanfeng.(2017).Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils.ACS NANO.
MLA	Zhang, Zhepeng,et al."Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils".ACS NANO (2017).