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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Synthesis of spherical assembly composed of Mn3O4 nanoparticles and its adsorption behavior for alizarin red in water 会议论文 International Conference on Frontier of Nanoscience and Technology (ICFNST 2011), Kunming, PEOPLES R CHINA, SEP 28-29, 2011 作者:  Yang, Ming*;  Sun, Qian;  Zhao, Chenfei;  Sheng, Xinxin 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/04 Porous spheres  Mn3O4  Adsorption  Alizarin red   Numerical Study on Effect of Random Dopant Fluctuation on Double Gate MOSFET Based 6-T SRAM Performance 会议论文 NSTI Nanotechnology Conference and Expo, 2011-06-13 作者:  Zhang, Xiufang[1];  Ma, Chenyue[2];  Zhao, Wei[3];  Zhang, Chenfei[4];  Wang, Guozeng[5] 收藏  |  浏览/下载：5/0  |  提交时间：2019/04/30 Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity 会议论文 NSTI Nanotechnology Conference and Expo, 2011-06-13 作者:  Xu, Jiaojiao[1];  Ma, Chenyue[2];  Zhang, Chenfei[3];  Zhang, Xiufang[4];  Wu, Wen[5] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/30 FinFET device  process fluctuation  vertical nonuniformity  performance variation   Synthesis of spherical assembly composed of Mn3O4 nanoparticles and its adsorption behavior for alizarin red in water 会议论文 International Conference on Frontier of Nanoscience and Technology (ICFNST 2011), Kunming, PEOPLES R CHINA, SEP 28-29, 2011 作者:  Yang, Ming*;  Sun, Qian;  Zhao, Chenfei;  Sheng, Xinxin 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/27 Porous spheres  Mn3O4  Adsorption  Alizarin red   A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance 会议论文 2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010, 2010-12-15 作者:  Guo, Xinjie[1];  Wang, Shaodi[2];  Ma, Chenyue[3];  Zhang, Chenfei[4];  Lin, Xinnan[5] 收藏  |  浏览/下载：3/0  |  提交时间：2019/04/30 Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Xu, Jiaojiao[2,3];  Ma, Chenyue[3];  Zhang, Chenfei[3];  Zhang, Xiufang[3];  Wu, Wen[1] 收藏  |  浏览/下载：7/0  |  提交时间：2019/04/15 FinFET device  process fluctuation  vertical nonuniformity  performance variation   An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Zhang, Chenfei[1,2,3];  Ma, Chenyue[2,3];  Xu, Jiaojiao[1];  Wang, Ruonan[2];  Zhao, Xiaojin[2] 收藏  |  浏览/下载：11/0  |  提交时间：2019/04/15 Interface Trap  Gate Oxide Trap  Subthreshold Current   Numerical Study on Effect of Random Dopant Fluctuation on Double Gate MOSFET Based 6-T SRAM Performance (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Zhang, Xiufang[1,2];  Ma, Chenyue[2];  Zhao, Wei[2];  Zhang, Chenfei[3];  Wang, Guozeng[2] 收藏  |  浏览/下载：2/0  |  提交时间：2019/04/15 Analytic potential model for asymmetricunderlap gate-all-around MOSFET (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Wang, Shaodi[1,2];  Guo, Xinjie[1,2];  Zhang, Lining[2];  Zhang, Chenfei[1,2];  Liu, Zhiwei[2] 收藏  |  浏览/下载：5/0  |  提交时间：2019/04/15 asymmetric  underlap  misalinment  gate-all-around