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Preparation and photoluminescence study of patterned substrate quantum wires 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 2, 页码: article no.20703
作者:  Yang XH;  He JF
收藏  |  浏览/下载:57/7  |  提交时间:2011/07/05
Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 4, 页码: 1005-1008
作者:  Yang XH
收藏  |  浏览/下载:29/0  |  提交时间:2010/04/11
Room temperature 1.25 mu m emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy 期刊论文
journal of crystal growth, 2005, 卷号: 278, 期号: 1-4, 页码: 728-733
作者:  Xu YQ
收藏  |  浏览/下载:17/0  |  提交时间:2010/03/17
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Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy 期刊论文
acta physica sinica, 2005, 卷号: 54, 期号: 6, 页码: 2950-2954
作者:  Xu YQ;  Niu ZC;  Zhang W;  Jiang DS;  Han Q
收藏  |  浏览/下载:66/31  |  提交时间:2010/03/17
GaAs-based room-temperature continuous-wave 1.59 mu m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy 期刊论文
applied physics letters, 2005, 卷号: 87, 期号: 23, 页码: art.no.231121
Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; Zhao, H; Peng, HL; Xu, YQ; Li, SY; He, ZH; Ren, ZW; Han, Q; Yang, XH; Du, Y; Wu, RH
收藏  |  浏览/下载:130/37  |  提交时间:2010/03/17
Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (InyGa1-yAs/GaAs1-x Sb-x)/ GaAs bilayer quantum wells 期刊论文
journal of crystal growth, 2005, 卷号: 278, 期号: 1-4, 页码: 558-563
作者:  Xu YQ
收藏  |  浏览/下载:109/23  |  提交时间:2010/03/17
Molecular beam epitaxy growth and photoluminescence of type-II (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well 期刊论文
chinese physics letters, 2004, 卷号: 21, 期号: 9, 页码: 1831-1834
Xu, XH; Niu, ZC; Ni, HQ; Xu, YQ; Zhang, W; He, ZH; Han, Q; Wu, RH
收藏  |  浏览/下载:210/60  |  提交时间:2010/03/09
Nano-layer structure of silicon-on-insulator materials 期刊论文
journal of the korean physical society, 2003, 卷号: 42, 期号: 0, 页码: s713-s718
Wang X; Chen M; Chen J; Wang X; Dong YN; Liu XH; He P; Tian LL; Liu ZL
收藏  |  浏览/下载:26/0  |  提交时间:2010/08/12
Surface acoustic wave velocity and electromechanical coupling coefficient of GaN grown on (0001) sapphire by metal-organic vapour phase epitaxy 期刊论文
chinese physics letters, 2001, 卷号: 18, 期号: 10, 页码: 1418-1419
作者:  Han PD
收藏  |  浏览/下载:84/7  |  提交时间:2010/08/12
Infrared absorption efficiency in AlAs/AlxGa1-xAs type-II multiple-quantum-well structure grown on (211) GaAs substrate 期刊论文
physica status solidi b-basic research, 2000, 卷号: 217, 期号: 2, 页码: 833-840
Zhu QS; He YP; Zhong ZT; Sun XH; Hiramatsu K
收藏  |  浏览/下载:46/0  |  提交时间:2010/08/12


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