Molecular beam epitaxy growth and photoluminescence of type-II (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well

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	Molecular beam epitaxy growth and photoluminescence of type-II (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well
	Xu, XH ; Niu, ZC ; Ni, HQ ; Xu, YQ ; Zhang, W ; He, ZH ; Han, Q ; Wu, RH
刊名	chinese physics letters
	2004
卷号	21 期号:9 页码:1831-1834
关键词	LONG-WAVELENGTH LASERS
ISSN号	0256-307x
通讯作者	xu, xh, chinese acad sci, inst semicond, natl lab supperlattice & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: xiaohua_xu@red.semi.ac.cn
中文摘要	we report a systematical study on the molecular beam epitaxy growth and optical property of (gaas1-xsbx/in-y ga1-yas)/gaas bilayer quantum well (bqw) structures. it is shown that the growth temperature of the wells and the sequence of layer growth have significant influence on the interface quality and the subsequent photoluminescence (pl) spectra. under optimized growth conditions, three high-quality (gaassb0.29/in0.4gaas)/gaas bqws are successfully fabricated and a room temperature pl at 1314 nm is observed. the transition mechanism in the bqw is also discussed by photoluminescence and photoreflectance measurements. the results confirm experimentally a type-ii band alignment of the interface between the gaassb and ingaas layers.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7972]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu, XH,Niu, ZC,Ni, HQ,et al. Molecular beam epitaxy growth and photoluminescence of type-II (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well[J]. chinese physics letters,2004,21(9):1831-1834.
APA	Xu, XH.,Niu, ZC.,Ni, HQ.,Xu, YQ.,Zhang, W.,...&Wu, RH.(2004).Molecular beam epitaxy growth and photoluminescence of type-II (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well.chinese physics letters,21(9),1831-1834.
MLA	Xu, XH,et al."Molecular beam epitaxy growth and photoluminescence of type-II (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well".chinese physics letters 21.9(2004):1831-1834.