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| Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN 期刊论文 science in china series e-technological sciences, 2003, 卷号: 46, 期号: 6, 页码: 620-626 作者: Zhang SM 收藏  |  浏览/下载:252/65  |  提交时间:2010/08/12
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| Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate 期刊论文 journal of crystal growth, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352 作者: Zhang SM 收藏  |  浏览/下载:230/30  |  提交时间:2010/08/12
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| Method for measurement of lattice parameter of cubic GaN layers on GaAs (001) 期刊论文 journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 345-348 Zheng XH; Wang YT; Feng ZH; Yang H; Chen H; Zhou JM; Liang JW 收藏  |  浏览/下载:39/0  |  提交时间:2010/08/12
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| Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD 期刊论文 journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253 作者: Zhang SM 收藏  |  浏览/下载:293/3  |  提交时间:2010/08/12
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| X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates 期刊论文 journal of crystal growth, 2003, 卷号: 254, 期号: 1-2, 页码: 23-27 Shen XM; Wang YT; Zheng XH; Zhang BS; Chen J; Feng G; Yang H 收藏  |  浏览/下载:111/0  |  提交时间:2010/08/12
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| Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth 期刊论文 science in china series a-mathematics physics astronomy, 2002, 卷号: 45, 期号: 11, 页码: 1461-1467 作者: Zhao DG 收藏  |  浏览/下载:68/0  |  提交时间:2010/08/12
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| Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate 期刊论文 science in china series e-technological sciences, 2002, 卷号: 45, 期号: 3, 页码: 255-260 作者: Zhang SM; Zhao DG 收藏  |  浏览/下载:86/5  |  提交时间:2010/08/12
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| Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching 期刊论文 journal of crystal growth, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372 作者: Zhao DG 收藏  |  浏览/下载:62/0  |  提交时间:2010/08/12
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| Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD 期刊论文 journal of crystal growth, 2002, 卷号: 242, 期号: 1-2, 页码: 124-128 Zheng XH; Feng ZH; Wang YT; Zheng WL; Jia QJ; Jiang XM; Yang H; Liang JW 收藏  |  浏览/下载:125/0  |  提交时间:2010/08/12
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| Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 399-403 Qu B; Zheng XH; Wang YT; Xu DP; Lin SM; Yang H; Liang JW 收藏  |  浏览/下载:85/11  |  提交时间:2010/08/12
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