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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Comparison of space- and ground-grown Ce: Bi12SiO20 single crystals 期刊论文 microgravity science and technology, 2006, 卷号: 17, 期号: 1, 页码: 40244 Zhou YF; Pan ZL; Liu Y; Ai F; Chen NF; Huang YY; He W; Tang LA; Wang JC 收藏  |  浏览/下载：269/40  |  提交时间：2010/04/11 Space growth studies of Ce-doped Bi12SiO20 single crystal 期刊论文 materials science and engineering b-solid state materials for advanced technology, 2004, 卷号: 113, 期号: 3, 页码: 179-183 Zhou YF; Wang JC; Tang LA; Pan ZL; Chen NF; Chen WC; Huang YY; He W 收藏  |  浏览/下载：107/20  |  提交时间：2010/03/09 Bridgman technique   Growth of CeO2 : Bi12SiO20 crystals in multi-position furnace(II) - Space growth experiment 期刊论文 journal of inorganic materials, 2004, 卷号: 19, 期号: 2, 页码: 283-288 Zhou YF; Wang JC; Tang LA; Chen NF; Chen WC 收藏  |  浏览/下载：65/18  |  提交时间：2010/03/09 doped cerium bismuth silicon oxides (Ce : BSO)   Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer 期刊论文 journal of crystal growth, 2001, 卷号: 231, 期号: 4, 页码: 520-524 Cao X; Zeng YP; Kong MY; Pan LA; Wang BQ; Zhu ZP; Wang XG; Chang Y; Chu JH 收藏  |  浏览/下载：134/8  |  提交时间：2010/08/12 molecular beam epitaxy  semiconducting III-V materials  high electron mobility transistors  ELECTRON-MOBILITY TRANSISTOR  CARRIER DENSITY  QUANTUM-WELLS  BAND-GAP   Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Cao X; Zeng YP; Cui LJ; Kong MY; Pan LA; Wang BQ; Zhu ZP 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 molecular beam epitaxy  MOBILITY   Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 127-131 Cao X; Zeng YP; Cui LJ; Kong MY; Pan LA; Wang BQ; Zhu ZP 收藏  |  浏览/下载：95/9  |  提交时间：2010/08/12 molecular beam epitaxy  MOBILITY