Growth of CeO2 : Bi12SiO20 crystals in multi-position furnace(II) - Space growth experiment

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Growth of CeO2 : Bi12SiO20 crystals in multi-position furnace(II) - Space growth experiment
	Zhou YF ; Wang JC ; Tang LA ; Chen NF ; Chen WC
刊名	journal of inorganic materials
	2004
卷号	19 期号:2 页码:283-288
关键词	doped cerium bismuth silicon oxides (Ce : BSO)
ISSN号	1000-324x
通讯作者	zhou, yf, chinese acad sci, shanghai inst ceram, shanghai 200050, peoples r china.
中文摘要	ce-doped bi12sio20 single crystal with size of phi10mm x 40mm was successfully grown in space on board of the spacecraft shenzhou no.3. the surface morphology of space-grown crystal is different from that of ground-grown crystal the space- and ground-grown crystals were measured by x-ray rocking curves, absorption spectra and micro-raman spectra. the results show that the quality of ce-deped crystal grown in space is better than that of the ground-grown one. the effect of doping on optical properties of bso grown in space is evident in comparison with the ground-grown crystal.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/8128]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhou YF,Wang JC,Tang LA,et al. Growth of CeO2 : Bi12SiO20 crystals in multi-position furnace(II) - Space growth experiment[J]. journal of inorganic materials,2004,19(2):283-288.
APA	Zhou YF,Wang JC,Tang LA,Chen NF,&Chen WC.(2004).Growth of CeO2 : Bi12SiO20 crystals in multi-position furnace(II) - Space growth experiment.journal of inorganic materials,19(2),283-288.
MLA	Zhou YF,et al."Growth of CeO2 : Bi12SiO20 crystals in multi-position furnace(II) - Space growth experiment".journal of inorganic materials 19.2(2004):283-288.