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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Three-region characteristic temperature in p-doped quantum dot lasers 期刊论文 applied physics letters, 2014, 卷号: 104, 期号: 4, 页码: 041102 Cao, YL; Ji, HM; Yang, T; Zhang, YH; Ma, WQ; Wang, QJ 收藏  |  浏览/下载：10/0  |  提交时间：2015/03/20 Dark current mechanism of unpassivated mid wavelength type II InAs/GaSb superlattice infrared photodetector 期刊论文 chinese science bulletin, 2014, 卷号: 59, 期号: 28, 页码: 3696-3700 Li, Q; Ma, WQ; Zhang, YH; Cui, K; Huang, JL; Wei, Y; Liu, K; Cao, YL; Wang, WY; Liu, YL; Jin, P 收藏  |  浏览/下载：20/0  |  提交时间：2015/03/20 Observation of linear and quadratic magnetic field-dependence of magneto-photocurrents in InAs/GaSb superlattice 期刊论文 nanoscale research letters, 2014, 卷号: 9, 页码: 279 Li, Y; Liu, Y; Jiang, CY; Zhu, LP; Qin, XD; Gao, HS; Ma, WQ; Guo, XL; Zhang, YH; Chen, YH 收藏  |  浏览/下载：37/0  |  提交时间：2015/03/25 Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature 期刊论文 physica e-low-dimensional systems & nanostructures, 2012, 卷号: 45, 页码: 173-176 Cui K (Cui, Kai); Ma WQ (Ma, Wenquan); Huang JL (Huang, Jianliang); Wei Y (Wei, Yang); Zhang YH (Zhang, Yanhua); Cao YL (Cao, Yulian); Gu YX (Gu, Yongxian); Yang T (Yang, Tao) 收藏  |  浏览/下载：19/0  |  提交时间：2013/04/02 High-brightness 1.3 mu m InAs/GaAs quantum dot tapered laser with high temperature stability 期刊论文 optics letters, 2012, 卷号: 37, 期号: 19, 页码: 4071-4073 Cao YL (Cao, Yulian); Ji HM (Ji, Haiming); Xu PF (Xu, Pengfei); Gu YX (Gu, Yongxian); Ma WQ (Ma, Wenquan); Yang T (Yang, Tao) 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/27 The Research Progress of Quantum Dot Lasers and Photodetectors in China 期刊论文 journal of nanoscience and nanotechnology, 2011, 卷号: 11, 期号: 11 s1, 页码: 9345-9356 Xu PF (Xu Peng-Fei); Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Xu B (Xu Bo); Ma WQ (Ma Wen-Quan); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：14/0  |  提交时间：2012/02/22 High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 2, 页码: art. no. 027801 Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Ma; WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：151/30  |  提交时间：2010/04/13 THRESHOLD CURRENT  ROOM-TEMPERATURE  DEPENDENCE  PHOTOLUMINESCENCE   Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating 期刊论文 applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: art. no. 171101 Cao YL (Cao Yu-Lian); Yang T (Yang Tao); Xu PF (Xu Peng-Fei); Ji HM (Ji Hai-Ming); Gu YX (Gu Yong-Xian); Wang XD (Wang Xiao-Dong); Wang Q (Wang Qing); Ma WQ (Ma Wen-Quan); Chen LH (Chen Liang-Hui) 收藏  |  浏览/下载：224/51  |  提交时间：2010/05/24 excited states  gallium arsenide  III-V semiconductors  indium compounds  laser tuning  optical films  quantum dot lasers  silicon compounds  tantalum compounds  TEMPERATURE-DEPENDENCE  THRESHOLD  PERFORMANCE  GAIN   Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers 期刊论文 journal of applied physics, 2010, 卷号: 107, 期号: 1, 页码: art. no. 013102 Xu PF (Xu Peng-Fei); Yang T (Yang Tao); Ji HM (Ji Hai-Ming); Cao YL (Cao Yu-Lian); Gu; YX (Gu Yong-Xian); Liu Y (Liu Yu); Ma WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：207/54  |  提交时间：2010/04/13 energy states  optical modulation  quantum dot lasers  THRESHOLD CURRENT  WELL  GAIN   Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers 会议论文 5th international conference on semiconductor quantum dots, gyeongju, south korea, may 11-16, 2008 作者:  Ma WQ;  Cao YL;  Yang T 收藏  |  浏览/下载：43/0  |  提交时间：2010/03/09 DENSITY-OF-STATES