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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 InxGa1-xN/GaN Multiple Quantum Well Solar Cells with Conversion Efficiency of 3.77% 期刊论文 chin. phys. lett., 2015, 卷号: 32, 期号: 8, 页码: 088401 Liu Shi-Ming; Xiao Hong-Ling; Wang Quan; Yan Jun-Da; Zhan Xiang-Mi; Gong Jia-Min; Wang Xiao-Liang; Wang Zhan-Guo 收藏  |  浏览/下载：21/0  |  提交时间：2016/03/29 Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors 期刊论文 chin. phys. lett., 2015, 卷号: 32, 期号: 12, 页码: 127301 Yan Jun-Da; Wang Quan; Wang Xiao-Liang; Xiao Hong-Ling; Jiang Li-Juan; Yin Hai-Bo; Feng Chun; Wang Cui-Mei; Qu Shen-Qi; Gong Jia-Min; Zhang Bo; Li Bai-Quan; Wang Zhan-Guo; Hou Xun 收藏  |  浏览/下载：31/0  |  提交时间：2016/03/29 Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057104 Hou QF (Hou Qi-Feng); Wang XL (Wang Xiao-Liang); Xiao; HL (Xiao Hong-Ling); Wang CM (Wang Cui-Mei); Yang CB (Yang Cui-Bai); Li JM (Li Jin-Min) 收藏  |  浏览/下载：255/64  |  提交时间：2010/05/24 N-TYPE GAN  DEEP LEVELS  SELENIDE  DEFECTS   The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates 期刊论文 chinese physics, 2007, 卷号: 16, 期号: 5, 页码: 1467-1471 Liu Z (Liu Zhe); Wang XL (Wang Xiao-Liang); Wang JX (Wang Jun-Xi); Hu GX (Hu Guo-Xin); Guo LC (Guo Lun-Chun); Li JM (Li Jin-Min) 收藏  |  浏览/下载：56/0  |  提交时间：2010/03/29 GaN   Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer 期刊论文 chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1705-1708 Ma ZY (Ma Zhi-Yong); Wang XL (Wang Xiao-Liang); Hu GX (Hu Guo-Xin); Ran JX (Ran Jun-Xue); Xiao HL (Xiao Hong-Ling); Luo WJ (Luo Wei-Jun); Tang J (Tang Jian); Li JP (Li Jian-Ping); Li JM (Li Jin-Min) 收藏  |  浏览/下载：70/0  |  提交时间：2010/03/29 ELECTRON-MOBILITY TRANSISTORS   Growth and annealing study of Mg-doped AlGaN and GaN/AlGaN superlattices 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 8, 页码: 2187-2189 Wang BZ (Wang Bao-Zhu); Wang XL (Wang Xiao-Liang); Hu GX (Hu Guo-Xin); Ran JX (Ran Jun-Xue); Wang XH (Wang Xin-Hua); Guo LC (Guo Lun-Chun); Xiao HL (Xiao Hong-Ling); Li JP (Li Jian-Ping); Zeng YP (Zeng Yi-Ping); Li JM (Li Jin-Min); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：28/0  |  提交时间：2010/04/11 LIGHT-EMITTING-DIODES