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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A Selective-Area Metal Bonding InGaAsP-Si Laser 期刊论文 ieee photonics technology letters, 2010, 卷号: 22, 期号: 15, 页码: 1141-1143 Hong T (Hong Tao); Ran GZ (Ran Guang-Zhao); Chen T (Chen Ting); Pan JQ (Pan Jiao-Qing); Chen WX (Chen Wei-Xi); Wang Y (Wang Yang); Cheng YB (Cheng Yuan-Bing); Liang S (Liang Song); Zhao LJ (Zhao Ling-Juan); Yin LQ (Yin Lu-Qiao); Zhang JH (Zhang Jian-Hua); Wang W (Wang Wei); Qin GG (Qin Guo-Gang) 收藏  |  浏览/下载：255/27  |  提交时间：2010/10/11 InGaAsP-Si laser  selective-area metal bonding (SAMB)  Si photonics   Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD 期刊论文 microelectronics journal, 2008, 卷号: 39, 期号: 9, 页码: 1108-1111 Luo, WJ; Wang, XL; Xiao, HL; Wang, CM; Ran, JX; Guo, LC; Li, JP; Liu, HX; Chen, YL; Yang, FH; Li, JM 收藏  |  浏览/下载：44/0  |  提交时间：2010/03/08 AlGaN/GaN  high electron mobility transistor (HEMT)  Si (111)   The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文 microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781 Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX 收藏  |  浏览/下载：94/1  |  提交时间：2010/03/08 GaN  HEMT  2DEG  mobility  polarization   Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD 期刊论文 microelectronics journal, 2008, 卷号: 39, 期号: 12, 页码: 1710-1713 Luo WJ; Wang XL; Guo LC; Mao HL; Wang CM; Ran JX; Li JP; Li JM 收藏  |  浏览/下载：191/53  |  提交时间：2010/03/08 GaN  Si(111)  Crack  AlN  MOCVD   Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer 期刊论文 chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1705-1708 Ma ZY (Ma Zhi-Yong); Wang XL (Wang Xiao-Liang); Hu GX (Hu Guo-Xin); Ran JX (Ran Jun-Xue); Xiao HL (Xiao Hong-Ling); Luo WJ (Luo Wei-Jun); Tang J (Tang Jian); Li JP (Li Jian-Ping); Li JM (Li Jin-Min) 收藏  |  浏览/下载：70/0  |  提交时间：2010/03/29 ELECTRON-MOBILITY TRANSISTORS   Growth and annealing study of Mg-doped AlGaN and GaN/AlGaN superlattices 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 8, 页码: 2187-2189 Wang BZ (Wang Bao-Zhu); Wang XL (Wang Xiao-Liang); Hu GX (Hu Guo-Xin); Ran JX (Ran Jun-Xue); Wang XH (Wang Xin-Hua); Guo LC (Guo Lun-Chun); Xiao HL (Xiao Hong-Ling); Li JP (Li Jian-Ping); Zeng YP (Zeng Yi-Ping); Li JM (Li Jin-Min); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：28/0  |  提交时间：2010/04/11 LIGHT-EMITTING-DIODES