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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes 期刊论文 phys. status solidi a, 2015, 卷号: 212, 期号: 5, 页码: 1158-1161 He Kang; Quan Wang; Hongling Xiao; Cuimei Wang; Lijuan Jiang; Chun Feng; Hong Chen; Haibo Yin; Shenqi Qu; Enchao Peng; Jiamin Gong; Xiaoliang Wang; Baiquan Li; Zhanguo Wang; Xun Hou 收藏  |  浏览/下载：30/0  |  提交时间：2016/03/29 Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width 期刊论文 journal of applied physics, 2013, 卷号: 114, 期号: 15, 页码: 4507 Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang 收藏  |  浏览/下载：22/0  |  提交时间：2014/03/18 High performance AlGaNGaN power switch with Si3N4 Insulation 期刊论文 the european physical journal applied physics, 2013, 卷号: 61, 期号: 1, 页码: 10101 Lin, Defeng; Wang, Xiaoliang; Xiao, Hongling; Kang, He; Wang, Cuimei; Jiang, Lijuan; Feng, Chun; Chen, Hong; Deng, Qingwen; Bi, Yang; Zhang, Jingwen; Hou, Xun 收藏  |  浏览/下载：25/0  |  提交时间：2014/03/18 MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC 期刊论文 半导体学报, 2006, 卷号: 27, 期号: 9, 页码: 1521-1525 作者:  Xiao Hongling;  Wang Cuimei 收藏  |  浏览/下载：12/0  |  提交时间：2010/11/23 Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy 期刊论文 半导体学报, 2004, 卷号: 25, 期号: 2, 页码: 121-125 Wang Xiaoliang; Hu Guoxin; Wang Junxi; Liu Xinyu; Liu Hongxin; Sun Dianzhao; Zeng Yiping; Qian He; Li Jinmin; Kong Meiying; Lin Lanying 收藏  |  浏览/下载：21/0  |  提交时间：2010/11/23