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High-quality metamorphic HEMT grown on GaAs substrates by MBE 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Zeng YP; Cao X; Cui LJ; Kong MY; Pan L; Wang BQ; Zhu ZP
收藏  |  浏览/下载:8/0  |  提交时间:2010/11/15
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Cao X; Zeng YP; Cui LJ; Kong MY; Pan LA; Wang BQ; Zhu ZP
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15


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