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浏览/检索结果: 共19条，第1-10条 帮助 限定条件 学科主题：半导体器件     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency 期刊论文 journal of crystal growth, 2014, 卷号: 395, 页码: 9-13 Dong, P; Yan, JC; Zhang, Y; Wang, JX; Zeng, JP; Geng, C; Cong, PP; Sun, LL; Wei, TB; Zhao, LX; Yan, QF; He, CG; Qin, ZX; Li, JM 收藏  |  浏览/下载：19/0  |  提交时间：2015/03/25 Large-Area and Ordered Sexfoil Pore Arrays by Spherical-Lens Photolithography 期刊论文 acs photonics, 2014, 卷号: 1, 期号: 8, 页码: 754-760 Geng, C; Yan, QF; Du, CX; Dong, P; Zhang, LJ; Wei, TB; Hao, ZB; Wang, XQ; Shen, DH 收藏  |  浏览/下载：22/0  |  提交时间：2015/03/25 AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency 期刊论文 journal of crystal growth, 2014, 卷号: 395, 页码: 9-13 Dong, P; Yan, JC; Zhang, Y; Wang, JX; Zeng, JP; Geng, C; Cong, PP; Sun, LL; Wei, TB; Zhao, LX; Yan, QF; He, CG; Qin, ZX; Li, JM 收藏  |  浏览/下载：29/0  |  提交时间：2015/03/25 Defect reduction in semipolar {10over-barover-bar} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth 期刊论文 crystengcomm, 2014, 卷号: 16, 期号: 21, 页码: 4562-4567 Yang, JK; Wei, TB; Huo, ZQ; Zhang, YH; Hu, Q; Wei, XC; Sun, BJ; Duan, RF; Wang, JX 收藏  |  浏览/下载：22/0  |  提交时间：2015/05/11 Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography 期刊论文 applied physics letters, 2014, 卷号: 105, 期号: 1, 页码: 013108 Zhang, YH; Wei, TB; Xiong, Z; Shang, L; Tian, YD; Zhao, Y; Zhou, PY; Wang, JX; Li, JM 收藏  |  浏览/下载：15/0  |  提交时间：2015/03/25 Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography 期刊论文 chinese physics b, 2014, 卷号: 23, 期号: 2, 页码: 028504 Wu, K; Wei, TB; Lan, D; Zheng, HY; Wang, JX; Luo, Y; Li, JM 收藏  |  浏览/下载：11/0  |  提交时间：2015/03/20 Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on freestanding GaN substrate with double embedded SiO2 photonic crystals 期刊论文 optics express, 2014, 卷号: 22, 期号: 13, 页码: a1093-a1100 Wei, TB; Huo, ZQ; Zhang, YH; Zheng, HY; Chen, Y; Yang, JK; Hu, Q; Duan, RF; Wang, JX; Zeng, YP; Li, JM 收藏  |  浏览/下载：20/0  |  提交时间：2015/03/25 Hydride vapor phase epitaxy of high quality {10over-barover-bar} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres 期刊论文 journal of crystal growth, 2014, 卷号: 387, 页码: 101-105 Yang, JK; Wei, TB; Huo, ZQ; Hu, Q; Zhang, YH; Duan, RF; Wang, JX 收藏  |  浏览/下载：20/0  |  提交时间：2015/03/20 Fabrication and optical characteristics of phosphor-free InGaN nanopyramid white light emitting diodes by nanospherical-lens photolithography 期刊论文 journal of applied physics, 2014, 卷号: 115, 期号: 12, 页码: 123101 Wu, K; Wei, TB; Zheng, HY; Lan, D; Wei, XC; Hu, Q; Lu, HX; Wang, JX; Luo, Y; Li, JM 收藏  |  浏览/下载：23/0  |  提交时间：2015/04/02 Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst 期刊论文 chinese physics b, 2014, 卷号: 23, 期号: 9, 页码: 096802 Zhao, Y; Wang, G; Yang, HC; An, TL; Chen, MJ; Yu, F; Tao, L; Yang, JK; Wei, TB; Duan, RF; Sun, LF 收藏  |  浏览/下载：22/0  |  提交时间：2015/03/25