Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst

	Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst
	Zhao, Y ; Wang, G ; Yang, HC ; An, TL ; Chen, MJ ; Yu, F ; Tao, L ; Yang, JK ; Wei, TB ; Duan, RF ; Sun, LF
刊名	chinese physics b
	2014
卷号	23 期号:9 页码:096802
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2015-03-25
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26187]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Zhao, Y,Wang, G,Yang, HC,et al. Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst[J]. chinese physics b,2014,23(9):096802.
APA	Zhao, Y.,Wang, G.,Yang, HC.,An, TL.,Chen, MJ.,...&Sun, LF.(2014).Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst.chinese physics b,23(9),096802.
MLA	Zhao, Y,et al."Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst".chinese physics b 23.9(2014):096802.