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| Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes 期刊论文 IEEE Photonics Journal, 2017, 卷号: 9, 期号: 2, 页码: 2300108 作者: Jing Yang; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu 收藏  |  浏览/下载:29/0  |  提交时间:2018/11/30 |
| Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes 期刊论文 Phys. Status Solidi A, 2017, 卷号: 214, 期号: 10, 页码: 1700320 作者: Yao Xing; De Gang Zhao; De Sheng Jiang; Xiang Li; Feng Liang 收藏  |  浏览/下载:39/0  |  提交时间:2018/07/11 |
| Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination 期刊论文 Journal of Alloys and Compounds, 2017, 卷号: 725, 期号: 2017, 页码: 1130-1135 作者: Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Dongping Shi 收藏  |  浏览/下载:30/0  |  提交时间:2018/07/11 |
| Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells 期刊论文 IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 卷号: 7, 期号: 4, 页码: 1017-1023 作者: Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Dongping Shi 收藏  |  浏览/下载:27/0  |  提交时间:2018/07/11 |
| Suppression of optical field leakage to GaN substrate in GaN-based green laser diode 期刊论文 Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 484-489 作者: Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu 收藏  |  浏览/下载:33/0  |  提交时间:2018/07/11 |
| New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode 期刊论文 Optics and Laser Technology, 2017, 卷号: 97, 页码: 284–289 作者: Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu 收藏  |  浏览/下载:17/0  |  提交时间:2018/07/11 |
| Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact 期刊论文 Applied Optics, 2017, 卷号: 56, 期号: 14, 页码: 4197-4200 作者: Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu 收藏  |  浏览/下载:17/0  |  提交时间:2018/07/11 |
| Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p++-GaN layer 期刊论文 Journal of Crystal Growth, 2017, 卷号: 467, 页码: 1-5 作者: Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu 收藏  |  浏览/下载:31/0  |  提交时间:2018/07/11 |
| Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure 期刊论文 journal of alloys and compounds, 2016, 卷号: 670, 页码: 258-261 Xiaoguang He; Degang Zhao; Wei Liu; Jing Yang; Xiaojing Li; Xiang Li 收藏  |  浏览/下载:12/0  |  提交时间:2017/03/10 |
| Understanding droop effect by analysis on carrier density dependence in InGaN/GaN multiple-quantum-well light-emitting diodes 期刊论文 superlattices and microstructures, 2016, 卷号: 96, 页码: 220-225 Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Jing Yang; Xiaoguang He; Xiaojing Li; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du 收藏  |  浏览/下载:29/0  |  提交时间:2017/03/10 |