Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

	Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure
	Xiaoguang He ; Degang Zhao ; Wei Liu ; Jing Yang ; Xiaojing Li ; Xiang Li
刊名	journal of alloys and compounds
	2016
卷号	670 页码:258-261
学科主题	光电子学
收录类别	SCI
公开日期	2017-03-10
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27859]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Xiaoguang He,Degang Zhao,Wei Liu,et al. Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure[J]. journal of alloys and compounds,2016,670:258-261.
APA	Xiaoguang He,Degang Zhao,Wei Liu,Jing Yang,Xiaojing Li,&Xiang Li.(2016).Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure.journal of alloys and compounds,670,258-261.
MLA	Xiaoguang He,et al."Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure".journal of alloys and compounds 670(2016):258-261.