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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2019    内容类型：期刊论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices 期刊论文 OPTICAL AND QUANTUM ELECTRONICS, 2019, 卷号: 51, 期号: 3 作者:  Guo, Chunyan;  Jiang, Zhi;  Jiang, Dongwei;  Wang, Guowei;  Xu, Yingqiang 收藏  |  浏览/下载：73/0  |  提交时间：2019/03/21 Dual-color infrared detectors  InAs  GaSb superlattices  Molecular beam epitaxy  Sulfide treatment passivation   Wide spectrum responsivity detectors from visible to mid-infrared based on antimonide 期刊论文 Infrared Physics and Technology, 2019, 卷号: 96, 页码: 1-6 作者:  Guo, Chunyan;  Sun, Yaoyao;  Jia, Qingxuan;  Jiang, Zhi;  Jiang, Dongwei 收藏  |  浏览/下载：136/0  |  提交时间：2019/11/19 InAs/GaSb type-II superlattices (T2SLs)  Photon traps (PTs) array  Wide spectrum infrared detector   Wide spectrum responsivity detectors from visible to mid-infrared based on antimonide 期刊论文 Infrared Physics and Technology, 2019, 卷号: 96, 页码: 1-6 作者:  Guo, Chunyan;  Sun, Yaoyao;  Jia, Qingxuan;  Jiang, Zhi;  Jiang, Dongwei 收藏  |  浏览/下载：101/0  |  提交时间：2018/12/03 Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 期刊论文 Chinese Physics B, 2019, 卷号: Vol.28 No.2, 页码: 028101 作者:  Jing Zhang;  Hongliang Lv;  Haiqiao Ni;  Shizheng Yang;  Xiaoran Cui 收藏  |  浏览/下载：10/0  |  提交时间：2019/12/17 2.1 μ m InGaSb quantum well lasers exhibiting the maximum conversion efficiency of 27.5% with digitally grown AlGaAsSb barriers and gradient layers 期刊论文 Superlattices and Microstructures, 2019, 卷号: 130, 页码: 339-345 作者:  Shengwen Xie ;   Chengao Yang ;   ShuShan Huang ;   Ye Yuan ;   Yi Zhang ;   Jinming Shang ;   Chenyuan Cai ;   Yu Zhang ;   Yingqiang Xu ;   Haiqiao Ni ;   Zhichuan Niu 收藏  |  浏览/下载：36/0  |  提交时间：2020/07/30 Wide spectrum responsivity detectors from visible to mid-infrared based on antimonide 期刊论文 INFRARED PHYSICS & TECHNOLOGY, 2019, 卷号: 96, 页码: 1-6 作者:  Chunyan Guo ;   Yaoyao Sun ;   Qingxuan Jia ;   Zhi Jiang ;   Dongwei Jiang ;   Guowei Wang ;   Yingqiang Xu ;   Tao Wang ;   Jinshou Tian ;   Zhaoxin Wu ;   Zhichuan Niu 收藏  |  浏览/下载：31/0  |  提交时间：2020/08/04 The study on fabrication and characterization of Al 0.2 In 0.8 Sb/InAs 0.4 Sb 0.6 heterostructures by molecular beam epitaxy 期刊论文 IEEE Access, 2019, 卷号: 7, 页码: 102710-102716 作者:  Jing Zhang;  Hongliang Lv;  Yifeng Song;  Haiqiao Ni;  Zhichuan Niu;  Yuming Zhang;   Senior Member, IEEE 收藏  |  浏览/下载：29/0  |  提交时间：2020/07/30 Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy 期刊论文 Chinese Physics B, 2019, 卷号: 28, 期号: 2, 页码: 028101 作者:  Jing Zhang ;   Hongliang Lv ;   Haiqiao Ni ;   Shizheng Yang ;   Xiaoran Cui ;   Zhichuan Niu ;   Yimen Zhang ;   Yuming Zhang 收藏  |  浏览/下载：21/0  |  提交时间：2020/07/30 Heterointerface-Driven Band Alignment Engineering and its Impact on Macro-Performance in Semiconductor Multilayer Nanostructures 期刊论文 Small, 2019, 页码: 1900837 作者:  Chenyuan Cai;   Yunhao Zhao;   Shengwen Xie;   Xuebing Zhao;   Yu Zhang;   Yingqiang Xu;   Chongyun Liang;   Zhichuan Niu;   Yi Shi;   Yuesheng Li;   Renchao Che 收藏  |  浏览/下载：23/0  |  提交时间：2020/07/30 High temperature characteristics of a 2 lm InGaSb/AlGaAsSb passively mode-locked quantum well laser 期刊论文 Applied Physics Letters, 2019, 卷号: 114, 页码: 221104 作者:  Xiang Li;   Hong Wang;   Zhongliang Qiao;   Xin Guo;   Wanjun Wang;   Jia Xu Brian Sia;   Geok Ing Ng;   Yu Zhang;   Zhichuan Niu;   Cunzhu Tong;   Chongyang Liu 收藏  |  浏览/下载：9/0  |  提交时间：2020/07/30