QQ客服 官方微博 反馈留言

浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2017     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs 期刊论文 CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 9 作者:  Li, Jianfei;  Lv, Yuanjie;  Li, Changfu;  Ji, Ziwu;  Pang, Zhiyong 收藏  |  浏览/下载：10/0  |  提交时间：2019/12/11 AlGaN/GaN HEMT  Fe-doping  photoluminescence  leakage current   Influence of AlN barrier thickness on AlN/GaN heterostructure optical and transport properties 期刊论文 OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2017, 卷号: 11, 期号: 3-4, 页码: 184-188 作者:  Li, Jianfei;  Lv, Yuanjie;  Huang, Shulai;  Ji, Ziwu;  Pang, Zhiyong 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11 Strain relaxation  Hall effect  Photoluminescence  Crack   Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 期号: 3, 页码: 1038-1044 作者:  Cui, Peng;  Liu, Huan;  Lin, Wei;  Lin, Zhaojun;  Cheng, Aijie 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11 AlGaN/GaNheterostructureFETs (HFETs)  gate bias  gate length  parasitic  source access resistance  polarization Coulomb field scattering   Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors 期刊论文 JOURNAL OF APPLIED PHYSICS, 2017, 卷号: 122, 期号: 12 作者:  Cui, Peng;  Lv, Yuanjie;  Lin, Zhaojun;  Fu, Chen;  Liu, Yan 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/11 Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 103, 页码: 113-120 作者:  Liu, Huan;  Cheng, Aijie;  Lin, Zhaojun;  Cui, Peng;  Liu, Yan 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11 AIGaN/GaN HFETs  Diffused Ohmic contact metal atoms  Polarization  Coulomb field scattering   Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 111, 页码: 806-815 作者:  Fu, Chen;  Lin, Zhaojun;  Liu, Yan;  Cui, Peng;  Lv, Yuanjie 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11 AlGaN/AlN/GaN HFETs  Strain distribution  Passivation  Polarization  coulomb field scattering   A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 110, 页码: 289-295 作者:  Cui, Peng;  Lin, Zhaojun;  Fu, Chen;  Liu, Yan;  Lv, Yuanjie 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11 AlGaN/GaN HFETs  Electron mobility  Transconductance  Polarization  Coulomb field scattering   Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 AIP ADVANCES, 2017, 卷号: 7, 期号: 8 作者:  Liu, Yan;  Lin, Zhaojun;  Cui, Peng;  Zhao, Jingtao;  Fu, Chen 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/11 Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs∗ 期刊论文 Chinese Physics B, 2017, 卷号: 26, 期号: 9 作者:  Li, Jianfei;  Lv, Yuanjie;  Li, Changfu;  Ji, Ziwu;  Pang, Zhiyong 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/12 Determination of the strain distribution for the Si3N4passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 Superlattices and Microstructures, 2017, 卷号: 111, 页码: 806-815 作者:  Fu, Chen;  Lin, Zhaojun;  Liu, Yan;  Cui, Peng;  Lv, Yuanjie 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/12