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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 发表日期：2015     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes 期刊论文 APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2015, 卷号: 121, 期号: 3, 页码: 1271-1276 作者:  Zhao, Jingtao;  Lin, Zhaojun;  Chen, Quanyou;  Yang, Ming;  Cui, Peng 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 85, 页码: 43-49 作者:  Yang, Ming;  Lin, Zhaojun;  Zhao, Jingtao;  Wang, Yutang;  Li, Zhiyuan 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 AlGaN/AlN/GaN HFETs  Sapphire substrate thickness  Strain   A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 79, 页码: 21-28 作者:  Zhao, Jingtao;  Lin, Zhaojun;  Luan, Chongbiao;  Chen, Quanyou;  Yang, Ming 收藏  |  浏览/下载：6/0  |  提交时间：2019/12/17 AlGaN/AlN/GaN HFETs  Strain  Ohmic contact   Fabrication and photoluminescence of strong phase-separated InGaN based nanopillar LEDs 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 88, 页码: 323-329 作者:  Wang, Qiang;  Zhu, Chuanrui;  Zhou, Yufan;  Wang, Xuesong;  Liu, Baoli 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/17 Nanopillar LED  Strain relaxation  Phase-separation  Photoluminescence   A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 APPLIED PHYSICS LETTERS, 2015, 卷号: 107, 期号: 11 作者:  Zhao, Jingtao;  Lin, Zhaojun;  Chen, Quanyou;  Yang, Ming;  Cui, Peng 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/17 Influence of sapphire substrate thickness on the characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 Superlattices and microstructures, 2015, 页码: 43-49 作者:  Yang, Ming;  Lin, Zhaojun;  Zhao, Jingtao;  Wang, Yutang;  Li, Zhiyuan 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 AlGaN/AlN/GaN HFETs  Sapphire substrate thickness  Strain   A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 Superlattices and microstructures, 2015, 页码: 21-28 作者:  Zhao, Jingtao;  Lin, Zhaojun;  Luan, Chongbiao;  Chen, Quanyou;  Yang, Ming 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/17 AlGaN/AlN/GaN HFETs  Strain  Ohmic contact   A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 Applied physics letters, 2015, 期号: 11, 页码: 113502-1-113502-5 作者:  Zhao, Jingtao;  Lin, Zhaojun;  Chen, Quanyou;  Yang, Ming;  Cui, Peng 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17