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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 发表日期：2014     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 Journal of Applied Physics, 2014, 期号: 4, 页码: 044507-1-044507-7 作者:  Chongbiao Luan;  Zhaojun Lin;  Yuanjie Lv;  Jingtao Zhao;  Yutang Wang 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/17 Influence of polarization coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 Physica, E. Low-dimensional systems & nanostructures, 2014, 页码: 76-79 作者:  Chongbiao Luan;  Zhaojun Lin;  Yuanjie Lv;  Zhihong Feng;  Jingtao Zhao 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 Subthreshold swing  Polarization Coulomb field scattering  AlGaN/AlN/GaN HFETs   The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors 期刊论文 Journal of Applied Physics, 2014, 期号: 2, 页码: 024504-1-024504-5 作者:  Yuanjie Lv;  Zhihong Feng;  Zhaojun Lin;  Ziwu Ji;  Jingtao Zhao 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/17 The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors 期刊论文 JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 2 作者:  Lv, Yuanjie;  Feng, Zhihong;  Lin, Zhaojun;  Ji, Ziwu;  Zhao, Jingtao 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 4 作者:  Luan, Chongbiao;  Lin, Zhaojun;  Lv, Yuanjie;  Zhao, Jingtao;  Wang, Yutang 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/17 Influence of polarization coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2014, 卷号: 62, 页码: 76-79 作者:  Luan, Chongbiao;  Lin, Zhaojun;  Lv, Yuanjie;  Feng, Zhihong;  Zhao, Jingtao 收藏  |  浏览/下载：1/0  |  提交时间：2019/12/17 Subthreshold swing  Polarization Coulomb field scattering  AlGaN/AlN/GaN  HFETs   Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes 期刊论文 APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 8 作者:  Zhao, Jingtao;  Lin, Zhaojun;  Luan, Chongbiao;  Zhou, Yang;  Yang, Ming 收藏  |  浏览/下载：4/0  |  提交时间：2019/12/17