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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 发表日期：2011    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Simulation of the light extraction efficiency of nanostructure light-emitting diodes 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 7, 页码: 77804 Zhu JH; Wang LJ; Zhang SM; Wang H; Zhao DG; Zhu JJ; Liu ZS; Jiang DS; Yang H 收藏  |  浏览/下载：12/0  |  提交时间：2012/02/06 The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 12, 页码: 127306 Le LC (Le Ling-Cong); Zhao DG (Zhao De-Gang); Wu LL (Wu Liang-Liang); Deng Y (Deng Yi); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Zhang BS (Zhang Bao-Shun); Yang H (Yang Hui) 收藏  |  浏览/下载：12/0  |  提交时间：2012/02/22 The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93117 作者:  Yang H;  Zhu JH;  Wang H;  Zhang SM;  Yang H 收藏  |  浏览/下载：48/3  |  提交时间：2011/07/05 DIODES  EFFICIENCY   A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector 期刊论文 journal of applied physics, 2011, 卷号: 110, 期号: 5, 页码: 53701 Zhao DG; Zhang S; Jiang DS; Zhu JJ; Liu ZS; Wang H; Zhang SM; Zhang BS; Yang H 收藏  |  浏览/下载：17/0  |  提交时间：2012/02/06 SURFACE PHOTOVOLTAGE SPECTROSCOPY  III-NITRIDES   Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文 journal of alloys and compounds, 2011, 卷号: 509, 期号: 3, 页码: 748-750 作者:  Yang H;  Jiang DS;  Le LC 收藏  |  浏览/下载：46/3  |  提交时间：2011/07/05 Nitride materials  Crystal growth  Composition fluctuations  X-ray diffraction  LAYER   Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 11, 页码: 116802 Li LG (Li Li-Gong); Liu SM (Liu Shu-Man); Luo S (Luo Shuai); Yang T (Yang Tao); Wang LJ (Wang Li-Jun); Liu FQ (Liu Feng-Qi); Ye XL (Ye Xiao-Ling); Xu B (Xu Bo); Wang ZG (Wang Zhan-Guo) 收藏  |  浏览/下载：9/0  |  提交时间：2012/02/21 Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.84339 作者:  Wang H;  Yang H;  Yang H;  Zhu JJ;  Zhao DG 收藏  |  浏览/下载：55/4  |  提交时间：2011/07/05