Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars

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	Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars
	Wang H; Yang H; Yang H; Zhu JJ; Zhao DG; Wang H; Wang LJ; Wang LJ; Zhu JH; Jiang DS
刊名	journal of applied physics
	2011
卷号	109 期号:8 页码:article no.84339
ISSN号	0021-8979
通讯作者	zhang, sm, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. smzhang@red.semi.ac.cn
学科主题	光电子学
收录类别	SCI
资助信息	national natural science foundation of china [60506001, 60776047, 60976045, 60836003]; national basic research programme of china [2007cb936700]; national science foundation for distinguished young scholars [60925017]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	light extraction efficiency improvement and strain relaxation were observed in ingan/gan multiple quantum well (mqw) nanopillars. ingan/gan mqw-based led nanopillar arrays with different diameters varying from about 120 to 250 nm were fabricated via inductively coupled plasma etching using ni self-assembled nanodots as etching mask. the ray trace method and tibercad were used to calculate the light extraction efficiency and strain relaxation in the nanopillars. remarkably improved light extraction efficiency and strain relaxation were obtained from the calculation results in the nanopillar structures. (c) 2011 american institute of physics. [doi:10.1063/1.3580477]
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20959]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Wang H,Yang H,Yang H,et al. Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars[J]. journal of applied physics,2011,109(8):article no.84339.
APA	Wang H.,Yang H.,Yang H.,Zhu JJ.,Zhao DG.,...&Zhang SM.(2011).Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars.journal of applied physics,109(8),article no.84339.
MLA	Wang H,et al."Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars".journal of applied physics 109.8(2011):article no.84339.