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浏览/检索结果: 共3条，第1-3条 帮助 限定条件 发表日期：2011    专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A Rigorous and Concise Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors 期刊论文 journal of computational and theoretical nanoscience, 2011 Zhang, Xukai; He, Jin; Zhang, Lining; Zhang, Jian; Ma, Yong; Wu, Wen; Wang, Wenping; Wang, Ruonan; Gu, Xin; Chan, Mansun 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 Bulk MOSFET Limit  Non-Classical CMOS  Double-Gate MOSFET  Device Physics  Surface Potential-Based Model  MOSFETS  DEVICE   An accurate method to extract and separate interface and gate oxide traps by the MOSFET subthreshold current 其他 2011-01-01 Zhang, Chenfei; Ma, Chenyue; Xu, Jiaojiao; Wang, Ruonan; Zhao, Xiaojin; Gu, Xin; Zhang, Xiufang; Wu, Wen; Wang, Wenping; Zhao, Wei; Ma, Yong; Wang, Ruonan; Zhang, Dongwei; Bian, Wei; Yang, Guozeng; Yan, Zhang; Liu, Zhiwei; Ma, Yong; He, Jin 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13 Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance 其他 2011-01-01 Zhang, Xiufang; Ma, Chenyue; Zhao, Wei; Zhang, Chenfei; Wang, Guozeng; Wu, Wen; Wang, Wenping; Cao, Yu; Yang, Shengqi; Yang, Zhang; Ma, Yong; Ye, Yun; Li, Yongliang; Wang, Ruonan; Wang, Ruonan; He, Jin 收藏  |  浏览/下载：6/0  |  提交时间：2015/11/13