A Rigorous and Concise Surface Potential-Based Core Model for the   Undoped Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect   Transistors

doi:10.1166/jctn.2011.1893

CORC > 北京大学 > 信息科学技术学院

	A Rigorous and Concise Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors
	Zhang, Xukai ; He, Jin ; Zhang, Lining ; Zhang, Jian ; Ma, Yong ; Wu, Wen ; Wang, Wenping ; Wang, Ruonan ; Gu, Xin ; Chan, Mansun
刊名	journal of computational and theoretical nanoscience
	2011
关键词	Bulk MOSFET Limit Non-Classical CMOS Double-Gate MOSFET Device Physics Surface Potential-Based Model MOSFETS DEVICE
DOI	10.1166/jctn.2011.1893
英文摘要	In this paper, a rigorous surface potential-based core undoped symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors (DG MOSFETs) model is derived by solving the Poisson's equation to obtain the relationship between the surface potential and applied voltage in the channel region in a self-consistent way. The drain current is then obtained from the Pao-Sah's double integral. The model consists of one set of the surface potential equations and the analytical drain current can be evaluated from the surface potentials at the source and drain ends. It is demonstrated that the model is valid for all operation regions of the DG MOSFETs and without any simplification (e.g., by using the charge sheet assumption) or auxiliary fitting functions. The model has been verified by extensive comparisons with 2-D numerical simulation under different operation conditions with different geometry. The consistency between the model calculation and numerical simulation demonstrated the accuracy of the model.; Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter; SCI(E); EI; 1; ARTICLE; 9; 1857-1862; 8
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291879]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Xukai,He, Jin,Zhang, Lining,et al. A Rigorous and Concise Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors[J]. journal of computational and theoretical nanoscience,2011.
APA	Zhang, Xukai.,He, Jin.,Zhang, Lining.,Zhang, Jian.,Ma, Yong.,...&Chan, Mansun.(2011).A Rigorous and Concise Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors.journal of computational and theoretical nanoscience.
MLA	Zhang, Xukai,et al."A Rigorous and Concise Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors".journal of computational and theoretical nanoscience (2011).