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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2006    学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes 期刊论文 journal of applied physics, 2006, 卷号: 100, 期号: 4, 页码: art.no.046101 Li DY (Li D. Y.); Huang YZ (Huang Y. Z.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Ye XJ (Ye X. J.); Chong M (Chong M.); Chen LH (Chen L. H.); Yang H (Yang H.); Liang JW (Liang J. W.) 收藏  |  浏览/下载：45/0  |  提交时间：2010/04/11 LINEWIDTH ENHANCEMENT FACTOR  WAVE-GUIDE LASER  GAN SUBSTRATE  INDEX  TEMPERATURE  GAIN   Potential frequency bandwidth estimation of TO packaging techniques for photodiode modules 期刊论文 optical and quantum electronics, 2006, 卷号: 38, 期号: 8, 页码: 675-682 Zhang SJ (Zhang S. J.); Zhu NH (Zhu N. H.); Liu Y (Liu Y.); Xie L (Xie L.) 收藏  |  浏览/下载：61/0  |  提交时间：2010/04/11 packaging  photodiode  photodiode module  scattering parameters measurement  LASER   Passively Q-switched and mode-locked diode-pumped Nd : YVO4 laser with LT-GaAs output coupler 期刊论文 optics communications, 2006, 卷号: 261, 期号: 2, 页码: 332-335 Liu J; Wang YG; Yang JM; He JL; Ma XY 收藏  |  浏览/下载：57/0  |  提交时间：2010/04/11 LT-GaAs  Nd : YVO4  QML  CUT ND-GDVO4 LASER  SATURABLE ABSORBER  LOCKING  CR4+-YAG  YAG   Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD 期刊论文 journal of crystal growth, 2006, 卷号: 295, 期号: 1, 页码: 40370 Liu JP (Liu J. P.); Shen GD (Shen G. D.); Zhu JJ (Zhu J. J.); Zhang SM (Zhang S. M.); Jiang DS (Jiang D. S.); Yang H (Yang H.) 收藏  |  浏览/下载：19/0  |  提交时间：2010/04/11 metal organic chemical vapor deposition  violet light-emitting diodes  AlInGaN quaternary alloy  QUATERNARY ALINGAN EPILAYERS  EMISSION  GAN   Q-switched and mode-locked diode-pumped Nd : YAG laser with an LT-GaAs 期刊论文 optik, 2006, 卷号: 117, 期号: 4, 页码: 163-166 Liu J; Gao LY; Wang YG; Tian WM; He JL; Ma XY 收藏  |  浏览/下载：61/0  |  提交时间：2010/04/11 LT-GaAs  Nd : YAG  diode-pump laser  mode-locking  Q-switching  SATURABLE-ABSORBER MIRROR  ND-GDVO4 LASER  ND-YVO4 LASER  LOCKING  CR4+-YAG   Chemical composition and elastic strain in AlInGaN quaternary films 期刊论文 thin solid films, 2006, 卷号: 515, 期号: 4, 页码: 1429-1432 Zhou, SQ (Zhou, Shengqiang); Wu, MF (Wu, M. F.); Yao, SD (Yao, S. D.); Liu, JP (Liu, J. P.); Yang, H (Yang, H.) 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/29 Rutherford backscattering spectroscopy   Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594 Wang JF (Wang Jian-Feng); Zhang BS (Zhang Bao-Shun); Zhang JC (Zhang Ji-Cai); Zhu JJ (Zhu Jian-Jun); Wang YT (Wang Yu-Tian); Chen J (Chen Jun); Liu W (Liu Wei); Jiang DS (Jiang De-Sheng); Yao DZ (Yao Duan-Zheng); Yang H (Yang Hui) 收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  HIGH-QUALITY GAN  ALN BUFFER LAYER  NUCLEATION LAYER  PHASE EPITAXY  EVOLUTION  DENSITY  SILICON  STRESS  SI   Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition 期刊论文 applied surface science, 2006, 卷号: 253, 期号: 5, 页码: 2452-2455 Zhao, DG (Zhao, D. G.); Liu, ZS (Liu, Z. S.); Zhu, JJ (Zhu, J. J.); Zhang, SM (Zhang, S. M.); Jiang, DS (Jiang, D. S.); Yang, H (Yang, Hui); Liang, JW (Liang, J. W.); Li, XY (Li, X. Y.); Gong, HM (Gong, H. M.) 收藏  |  浏览/下载：30/0  |  提交时间：2010/03/29 Al incorporation   Characteristics of InGaN multiple quantum well blue-violet laser diodes 期刊论文 science in china series e-technological sciences, 2006, 卷号: 49, 期号: 6, 页码: 727-732 Li DY (Li Deyao); Zhang SM (Zhang Shuming); Wang JF (Wang Jianfeng); Chen J (Chen Jun); Chen LH (Chen Lianghui); Chong M (Chong Ming); Zhu JJ (Zhu Jianjun); Zhao DG (Zhao Degang); Liu ZS (Liu Zongshun); Yang H (Yang Hui); Liang JW (Liang Junwu) 收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11 metalorganic chemical vapor deposition (MOCVD)  GaN-hased laser diodes  multiple quantum well  ridge waveguide  threshold current  ELECTRICAL-PROPERTIES  GAN SUBSTRATE  CONTACTS   Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films 期刊论文 applied physics letters, 2006, 卷号: 88, 期号: 25, 页码: art.no.252101 Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang Hui); Zhu JJ (Zhu J. J.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Liang JW (Liang J. W.); Hao XP (Hao X. P.); Wei L (Wei L.); Li X (Li X.); Li XY (Li X. Y.); Gong HM (Gong H. M.) 收藏  |  浏览/下载：57/0  |  提交时间：2010/04/11 YELLOW LUMINESCENCE  ELECTRON-BEAM  VACANCIES