Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films

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	Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films
	Zhao DG (Zhao D. G.) ; Jiang DS (Jiang D. S.) ; Yang H (Yang Hui) ; Zhu JJ (Zhu J. J.) ; Liu ZS (Liu Z. S.) ; Zhang SM (Zhang S. M.) ; Liang JW (Liang J. W.) ; Hao XP (Hao X. P.) ; Wei L (Wei L.) ; Li X (Li X.) ; Li XY (Li X. Y.) ; Gong HM (Gong H. M.)
刊名	applied physics letters
	2006
卷号	88 期号:25 页码:art.no.252101
关键词	YELLOW LUMINESCENCE ELECTRON-BEAM VACANCIES
ISSN号	0003-6951
通讯作者	zhao, dg, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. e-mail: dgzhao@red.semi.ac.cn
中文摘要	we investigate the effects of lightly si doping on the minority carrier diffusion length in n-type gan films by analyzing photovoltaic spectra and positron annihilation measurements. we find that the minority carrier diffusion length in undoped n-type gan is much larger than in lightly si-doped gan. positron annihilation analysis demonstrates that the concentration of ga vacancies is much higher in lightly si-doped gan and suggests that the ga vacancies instead of dislocations are responsible for the smaller minority carrier diffusion length in the investigated si-doped gan samples due to the effects of deep level defects. (c) 2006 american institute of physics.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10590]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao DG ,Jiang DS ,Yang H ,et al. Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films[J]. applied physics letters,2006,88(25):art.no.252101.
APA	Zhao DG .,Jiang DS .,Yang H .,Zhu JJ .,Liu ZS .,...&Gong HM .(2006).Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films.applied physics letters,88(25),art.no.252101.
MLA	Zhao DG ,et al."Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films".applied physics letters 88.25(2006):art.no.252101.